Nexperia B.V. Brt Transistor, Aec-Q101, 50V, 2.2K/47K; Digital Transistor Polarity Nexperia PQMD10

NPN/PNP resistor-equipped transistors with built-in bias resistors R1 = 2.2 kΩ and R2 = 47 kΩ, designed for low-current digital applications and mobile devices, in a leadless DFN1010B-6 (SOT1216) package measuring 1.0 mm × 1.0 mm × 0.37 mm. Each transistor supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a total power dissipation of 350 mW per device and an operating junction temperature up to 150 °C. The device is AEC-Q101 qualified for automotive use.