N-channel enhancement mode Trench MOSFET in a SOT23 surface-mounted package measuring 2.9 mm x 1.3 mm x 1 mm, rated for 30 V drain-source voltage and 8.2 A continuous drain current at 25 °C with a typical on-state resistance of 13.5 mΩ at 4.5 V gate-source bias. The device operates with a gate-source voltage range of −12 V to 12 V, junction temperature range of −55 °C to 150 °C, and meets IEC 60134 absolute maximum ratings. It is not qualified for automotive use.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMV13XN/SOT23/TO-236
PMV13XN/SOT23/TO-236
PMV13XN/SOT23/TO-236
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | PMV13XNR | 1727-PMV13XNRCT-ND |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | 30 volts | |
| IDSS | 8200 milliamps | |
| VGS(off) | 12 volts |
