N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 surface-mounted plastic package measuring 2.9 mm x 1.3 mm x 1 mm, using Trench MOSFET technology. It has a drain-source voltage rating of 60 V, a continuous drain current of 1.6 A at 25 °C, and a drain-source on-state resistance of 164 mΩ at 10 V gate-source voltage and 25 °C. The junction temperature range extends to 175 °C, with ESD protection exceeding 2 kV HBM (class H2). It is compatible with logic-level signals and designed for applications including relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 60V 1.6A (Ta) 640mW (Ta), 5.8W (Tc) Surface Mount TO-236AB
N-Channel 60V 1.6A (Ta) 640mW (Ta), 5.8W (Tc) Surface Mount TO-236AB
N-Channel 60V 1.6A (Ta) 640mW (Ta), 5.8W (Tc) Surface Mount TO-236AB
MOSFET, N-CH, 60V, 1.6A, SOT-23 ROHS COMPLIANT: YES
PMV164ENE/SOT23/TO-2
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMV164ENER | 1727-PMV164ENERTR-ND | 26AK2758 | PMV164ENER |
| Product Name | 60 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 1.6A, Sot-23 Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 60 volts | |||
| IDSS | 1600 milliamps | |||
| VGS(off) | 20 volts | |||
| PD | 640 milliwatts |
