N-channel enhancement mode MOSFET in a leadless DFN2020MD-6 (SOT1220) surface-mount package measuring 2 x 2 x 0.65 mm with an exposed drain pad for enhanced thermal conduction. It has a drain-source voltage rating of 30 V, a continuous drain current of 9 A at 25 °C, and a drain-source on-resistance of 12 to 14.5 mΩ at 10 V gate-source voltage. Peak drain current is 34 A for pulses up to 10 µs, and total power dissipation is 1.7 W at 25 °C. The device meets IEC 60134 absolute maximum ratings and is suitable for portable power management applications including DC-DC conversion and battery-powered systems.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMPBxEN - 30 V, N-channel Trench MOSFET DFN 6-Pin Product overview: PMPB11EN,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB11EN,115 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089728-PMPB11EN,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-DFN2020MD (2x2)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 20.6nC @ 10V
Max Input Capacitance: 840pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14.5 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 9A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
N-Channel 30V 9A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
N-Channel 30V 9A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
MOSFET, N-CH, 30V, 9A, DFN2020MD ROHS COMPLIANT: YES
MOSFET N-CH 30V 9A DFN2020MD-6
MOSFET N-CH 30V 9A DFN2020MD-6
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMPB11EN,115 | 278-PMPB11EN,115 | 1089728-PMPB11EN,115 | 1727-1244-6-ND | 74AH1152 | PMPB11EN,115 | PMPB11EN,115 |
| Product Name | 30 V, N-channel Trench MOSFET | N-Channel 30 V DFN MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMPB11EN,115 | Single FETs, MOSFETs | Mosfet, N-Ch, 30V, 9A, Dfn2020Md Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 13000 milliamps | 9000 milliamps | |||||
| VGS(off) | 20 volts | ||||||
| PD | 1.7 milliwatts | 1700 to 12500 milliwatts | 1700 milliwatts |
