N-channel 100 V logic level MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology, designed for power supply and motor control applications. The device has a drain-source on-state resistance of 14.6 to 19 mΩ at 25 °C, a continuous drain current of 56 A at 25 °C, and a peak drain current of 226 A for pulses up to 10 µs. It supports avalanche energy up to 94.1 mJ and is rated for a maximum junction temperature of 175 °C. The gate-source voltage ranges from -20 V to +20 V. The package is a surface-mounted, single-ended Power-SO8 with four leads, and the drain terminal is connected to the mounting base.
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.
Features and benefits
Applications
N-Channel 100V 56A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 100V 56A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 100V 56A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8
Win Source Part Number: 1179618-PSMN019-100Y
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 167W (Tc)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Gate Charge (Qg) (Max) @ Vgs: 72.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 934069905115,568-130
Base Product Number: PSMN019
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
MOSFET N-CH 100V 56A LFPAK56
MOSFET PSMN019-100YL/LFPAK/
| Nexperia B.V. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PSMN019-100YLX | 1727-2592-1-ND | 1179618-PSMN019-100YLX | PSMN019-100YLX | PSMN019-100YLX |
| Product Name | N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 100 volts | ||||
| IDSS | 56000 milliamps | ||||
| VGS(off) | 20 volts | ||||
| PD | 167 milliwatts | 167000 milliwatts |
