Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.
Features and benefits
Applications
N-Channel 100V 69A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 100V 69A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 100V 69A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8
MOSFET N-CH 100V 69A LFPAK56
PSMN015-100YL - N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: PSMN015-100YLX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN015-100YLX can be used for catalog matching and distributor lookup.
Win Source Part Number: 964233-PSMN015-100YL
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 195W (Tc)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Gate Charge (Qg) (Max) @ Vgs: 86.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6139 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPB052N04NG; BSC109N10NS3GATMA1; IPD60N10S4L12ATMA1; DMTH10H015LK3-13; DMTH8012LPSQ-13; DMTH8012LPS-13;
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 934069904115,568-130
Base Product Number: PSMN015
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
MOSFET N-CH 100V 69A LFPAK56
MOSFET, N-CH, 100V, 69A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:69A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0116ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET PSMN015-100YL/LFPAK/
| Nexperia B.V. | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PSMN015-100YLX | 1727-2591-1-ND | PSMN015-100YLX | 278-PSMN015-100YLX | 964233-PSMN015-100YLX | PSMN015-100YLX | 96Y9583 | PSMN015-100YLX |
| Product Name | N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 100 V SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 69A, Sot-669-4; Transistor Polarity Nexperia | MOSFET |
| MOSFET Operating Mode | Enhancement | |||||||
| Package Type | SOT669 | SC-100, SOT-669 | SC-100, SOT-669 | SOT3 | SC-100, SOT-669 | TO-3 | ||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts |