Nexperia B.V. Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very... | |
| Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications... | |
| Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial... | |
| Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Small and leadless ultra thin... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj =... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Extremely fast switching Logic... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Logic level compatible Trench... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology ESD... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold High-speed switching No secondary... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range... | |
| N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Direct interface to Complementary (C-MOS)... | |
| NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST60-Q Features and benefits Integrated diode and resistor Qualified according to AEC-Q101 and recommended... | |
| NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST60 Features and benefits Integrated diode and resistor Applications Industrial switching applications such as:... | |
| NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST61 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications... | |
| NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST62-Q Features and benefits Integrated diode and resistor Qualified according to AEC-Q101 and recommended... | |
| NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST62 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications... | |
| NPN Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BSP61 Features and benefits High current of 1 A Low voltage of 60 V Integrated diode and... | |
| NPN Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BSP62 Features and benefits High current of 1 A Low voltage of 80 V Integrated diode and... | |
| NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR31-Q. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)... | |
| NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR31. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)... | |
| NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR33-Q. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)... | |
| NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR33. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) AEC-Q101 qualified Applications General purpose... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Qualified according to AEC-Q101 and... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BCX71H-Q Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Qualified according... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BCX71H Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) AEC-Q101 qualified... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BCX71J Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) AEC-Q101 qualified... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BCX71K-Q Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Qualified according... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BCX71K Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) AEC-Q101 qualified... | |
| NPN high-voltage transistor in a small SOT23 plastic package. PNP complements: BF823. Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) Applications Telephony and professional communication... | |
| NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF821-Q Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) Qualified according... | |
| NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF821 Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) Applications Telephony... | |
| NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF823-Q Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) Qualified according... | |
| NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BSR20A-Q Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Qualified according... | |
| NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BSR20A Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Applications General... | |
| NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 350 V) Applications Switching and amplification Especially used... | |
| NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 350 V) Qualified according to AEC-Q101 and recommended... | |
| NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BF723-Q Features and benefits Low feedback capacitance Qualified according to AEC-Q101 and recommended for use in automotive... | |
| NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BF723 Features and benefits Low feedback capacitance Applications General purpose high voltage circuits | |
| NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 350 V) Applications General purpose... | |
| NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 350 V) Qualified according to... | |
| NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 50 mA) High voltage (max. 250 V) Qualified according to... | |
| NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) Qualified according to... | |
| NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BF621 Features and benefits Low current (max. 50 mA) High voltage (max. 300 V)... | |
| NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BF623 Features and benefits Low current (max. 50 mA) High voltage (max. 250 V)... | |
| NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) Applications Telephony and... | |
| NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) Qualified according to... | |
| NPN medium frequency transistor in a SOT23 plastic package. Features and benefits IC(max) =25 mA VCEO(max) =20 V. AEC-Q101 qualified Applications Medium frequency applications in thick and thin-film... | |
| NPN medium frequency transistor in a SOT23 plastic package. Features and benefits IC(max) =25 mA VCEO(max) =20 V Very low feedback capacitance (typ. 350 fF). AEC-Q101 qualified Applications... | |
| NPN medium frequency transistor in a SOT23 plastic package. Features and benefits Low current (max. 25 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications AM mixers IF amplifiers in... | |
| NPN medium frequency transistor in a SOT323 (SC-70) plastic package. Features and benefits Low current (max. 25 mA) Low voltage (max. 20 V). Very low feedback capacitance (typ. 350 fF). | |
| NPN medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complements: BSP31; BSP32 and BSP33. Features and benefits High current High power dissipation capability AEC-Q101 qualified Applications... | |
| NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain... | |
| NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink... | |
| NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package Features and benefits High collector current capability IC and ICM Three current gain... | |
| NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain... | |
| NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complements: BSR16-Q Features and benefits High current (max. 800 mA) Low voltage (max. 40 V) Qualified according... | |
| NPN switching transistor in a SOT23 plastic package. PNP complements: BSR15 and BSR16. Features and benefits High current (max. 800 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications Switching... | |
| NPN switching transistor in a SOT23 plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 12 V). AEC-Q101 qualified Applications High speed saturated switching applications, especially... | |
| NPN transistor in a SOT23 plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 15 V) Low feedback capacitance (max. 2.2 pF). AEC-Q101 qualified Applications Monitors... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Small and leadless ultra thin... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj =... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range T... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Low on-state resistance Trench... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK33 package using Trench MOSFET technology. This product has been designed and qualified to AEC Q101 standard for use in high performance... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC Q101... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Side-wettable flanks for... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33-WF (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Side wettable flanks... | |
| P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use... | |
| P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device (SMD) plastic package. Features and benefits Direct interface to Complementary... | |
| P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device (SMD) plastic package. Features and benefits Low conduction losses due... | |
| PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BST50-Q Features and benefits Integrated diode and resistor Qualified according to AEC-Q101 and recommended... | |
| PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BST50 Features and benefits Integrated diode and resistor Applications Industrial switching applications such as:... | |
| PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BST51 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications... | |
| PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BST52 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications... | |
| PNP Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BSP52-Q Features and benefits High current of -1 A Low voltage of -80 V Integrated diode and... | |
| PNP Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BSP52 Features and benefits High current of -1 A Low voltage of -80 V Integrated diode and... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX70H-Q Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Low noise... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX70H Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Low noise... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX70J Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Low noise... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX70K-Q Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Low noise... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX70K Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Low noise... | |
| PNP high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BF722-Q Features and benefits Low feedback capacitance Qualified according to AEC-Q101 and recommended for use in automotive... | |
| PNP high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BF722 Features and benefits Low feedback capacitance Applications General purpose high voltage circuits | |
| PNP high-voltage transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 100 V) Applications High-voltage general purpose Switching... | |
| PNP high-voltage transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 100 V) Qualified according to AEC-Q101 and... | |
| PNP high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. -50 mA) High voltage (max. -300 V) Qualified according to... | |
| PNP high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BF620 Features and benefits Low current (max. -50 mA) High voltage (max. -300 V)... | |
| PNP high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BF622-Q Features and benefits Low current (max. -50 mA) High voltage (max. -250 V)... | |
| PNP high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BF622 Features and benefits Low current (max. -50 mA) High voltage (max. -250 V)... | |
| PNP medium frequency transistor in a SOT23 plastic package. Features and benefits Low current (max. 25 mA) Low voltage (max. 30 V). AEC-Q101 qualified Applications RF stages in FM front-ends... | |
| PNP medium frequency transistor in a SOT23 plastic package. Features and benefits Low current (max. 25 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications Medium frequency applications in thick... | |
| PNP medium frequency transistor in a SOT323 plastic package. Features and benefits Low current (max. 25 mA) Low voltage (max. 30 V). AEC-Q101 qualified Applications RF stages in FM front-ends... | |
| PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR41-Q Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and... | |
| PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR41 Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and... | |
| PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43-Q Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and... | |
| PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43 Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and... | |
| PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink... | |
| PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and Side-Wettable Flanks (SWF). Features and benefits High collector... | |
| PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain... | |
| PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: BSR14 Features and benefits Single general-purpose switching transistor AEC-Q101 qualified Applications Switching and linear amplification... | |
| PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Single general-purpose switching transistor Qualified according to AEC-Q101 and recommended for use in automotive applications... | |
| PNP transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complements: BF820 and BF822 Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) Applications... | |
| PNP transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complements: BF820 and BF822 Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) AEC-Q101... | |
| PNP transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complements: BF820-Q and BF822-Q. Features and benefits Low current (max. 50 mA) High voltage (max. 300 V). Qualified... | |
| PNP transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complements: BF820-Q and BF822-Q Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) Qualified... |
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