Nexperia B.V. Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
Automotive qualified Dual N-channel standard level MOSFET using the latest Trench 15 low ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, providing high ruggedness at low RDSon, housed in an...
Automotive qualified N-channel MOSFET using the latest Trench 12 low ohmic split-gate technology, for ultra-low RDS(on) capability, housed in a CCPAK1212 (SOT8000A) package. This product has been fully designed...
Automotive qualified N-channel MOSFET using the latest Trench 12 low ohmic split-gate technology, for ultra-low RDS(on) capability, housed in a CCPAK1212i (SOT8005A) package. This product has been fully designed...
Automotive qualified N-channel MOSFET using the latest Trench 14 low ohmic split-gate technology, for ultra-low RDSon capability, housed in a LFPAK56 package. This product has been fully designed and...
Automotive qualified N-channel MOSFET using the latest Trench 14 low ohmic split-gate technology, for ultra-low RDSon capability, housed in a LFPAK56E package. This product has been fully designed and...
Automotive qualified N-channel MOSFET using the latest Trench 15 low ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, providing high ruggedness at low RDSon, housed in an LFPAK56 package. This...
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond...
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101...
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101...
Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive...
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range...
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast...
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD...
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very...
Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance...
Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive...
Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101. An internal connection is made...
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications...
Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial...
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj...
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Small and leadless ultra thin...
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra...
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range...
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj =...
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Extended temperature range...
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET...
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Extremely fast switching Logic...
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology ESD...
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj =...
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET...
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench...
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range...
N-channel enhancement mode vertical D-MOS transistor in a SOT223 package, intended for use as a surface-mounted device in line current interrupters in telephone sets and for application in relay, high...
NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST60-Q Features and benefits Integrated diode and resistor Qualified according to AEC-Q101 and recommended...
NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST60 Features and benefits Integrated diode and resistor Applications Industrial switching applications such as:...
NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST61 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications...
NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST62-Q Features and benefits Integrated diode and resistor Qualified according to AEC-Q101 and recommended...
NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST62 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications...
NPN Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BSP61 Features and benefits High current of 1 A Low voltage of 60 V Integrated diode and...
NPN Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BSP62 Features and benefits High current of 1 A Low voltage of 80 V Integrated diode and...
NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR31-Q. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)...
NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR31. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)...
NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR33-Q. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)...
NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR33. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)...
NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BSR20A-Q Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Qualified according...
NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BSR20A Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Applications General...
NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 350 V) Applications General purpose...
NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 350 V) Qualified according to...
NPN medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complements: BSP31; BSP32 and BSP33. Features and benefits High current High power dissipation capability AEC-Q101 qualified Applications...
NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complements: BSR16-Q Features and benefits High current (max. 800 mA) Low voltage (max. 40 V) Qualified according...
NPN switching transistor in a SOT23 plastic package. PNP complements: BSR15 and BSR16. Features and benefits High current (max. 800 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications Switching...
NPN switching transistor in a SOT23 plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 12 V). AEC-Q101 qualified Applications High speed saturated switching applications, especially...
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj...
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Small and leadless ultra thin...
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj =...
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET...
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET...
P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK33 package using Trench MOSFET technology. This product has been designed and qualified to AEC Q101 standard for use in high performance...
P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC Q101...
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Side-wettable flanks for...
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33-WF (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology...
P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Side wettable flanks...
P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use...
PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BST50-Q Features and benefits Integrated diode and resistor Qualified according to AEC-Q101 and recommended...
PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BST50 Features and benefits Integrated diode and resistor Applications Industrial switching applications such as:...
PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BST51 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications...
PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BST52 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications...
PNP Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BSP52-Q Features and benefits High current of -1 A Low voltage of -80 V Integrated diode and...
PNP Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BSP52 Features and benefits High current of -1 A Low voltage of -80 V Integrated diode and...
PNP high-voltage transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 100 V) Applications High-voltage general purpose Switching...
PNP high-voltage transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 100 V) Qualified according to AEC-Q101 and...
PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR41-Q Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and...
PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR41 Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and...
PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43-Q Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and...
PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43 Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and...
PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and Side-Wettable Flanks (SWF). Features and benefits High collector...
PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Single general-purpose switching transistor Qualified according to AEC-Q101 and recommended for use in automotive applications...
PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR14 Features and benefits Single general-purpose switching transistor Applications Switching and linear amplification
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate...
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC...
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in...
Standard level N-Channel MOSFET in a compact MLPAK33-WF (SOT8002-3D) package using Trench 9 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.
Standard level N-Channel MOSFET in a small MLPAK33-WF (SOT8002-3D) package using Trench 9 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features and...
Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features...
Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive...

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