Nexperia B.V. 20 V, N-channel Trench MOSFET PMX100UNEZ

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. The package measures 0.63 mm x 0.33 mm x 0.25 mm with a 0.225 mm pitch. It has a drain-source voltage rating of 20 V, a gate-source voltage rating of ±8 V, and a continuous drain current of 1.4 A at 25 °C with a 1 cm² drain pad. The drain-source on-state resistance is 130 to 160 mΩ at VGS = 4.5 V and ID = 1 A. Electrostatic discharge protection exceeds 2 kV HBM. The device operates from -55 °C to 150 °C junction temperature with a thermal resistance from junction to ambient of 215 to 250 K/W with a 1 cm² drain pad.