N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 surface-mounted plastic package using Trench MOSFET technology, with a 30 V drain-source voltage, 3.2 A continuous drain current, and a drain-source on-state resistance of 52 to 70 mΩ at 10 V gate-source voltage and 25 °C junction temperature. The device supports a maximum junction temperature of 175 °C and provides ESD protection greater than 1 kV HBM (class H1C). Physical dimensions are 2.9 mm × 1.3 mm × 1 mm.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 30V 3.2A (Ta) 630mW (Ta), 5.7W (Tc) Surface Mount TO-236AB
N-Channel 30V 3.2A (Ta) 630mW (Ta), 5.7W (Tc) Surface Mount TO-236AB
N-Channel 30V 3.2A (Ta) 630mW (Ta), 5.7W (Tc) Surface Mount TO-236AB
PMV52ENE/SOT23/TO-23
MOSFET, N-CH, 30V, 3.2A, SOT-23 ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV52ENER | 1727-PMV52ENERTR-ND | PMV52ENER | 26AK2761 |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 3.2A, Sot-23 Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 30 volts | |||
| IDSS | 3200 milliamps | |||
| VGS(off) | 20 volts | |||
| PD | 630 milliwatts |
