P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package with a body size of 1.0 x 0.6 x 0.37 mm, using Trench MOSFET technology. It has a drain-source voltage rating of -30 V, a gate-source voltage range of -8 V to 8 V, and a continuous drain current of -1 A at 25 °C with a 1 cm² drain pad. The on-state resistance is 430 mΩ to 510 mΩ at V_GS = -4.5 V and T_j = 25 °C. The device offers electrostatic discharge protection exceeding 2 kV HBM and operates within a junction temperature range of -55 °C to 150 °C.
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 30V 1A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3
P-Channel 30V 1A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3
P-Channel 30V 1A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3
Small Signal Field-Effect Transistor, 1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P-Channel JFET, 30V, 3-Pin DFN Product overview: PMZB320UPEYL from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMZB320UPEYL can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 890116-PMZB320UPEYL
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 30 V 1A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3
Package: 3-XFDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: PMZB320
Categories: Discrete Semiconductor Products
Case / Package: DFN1006B-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 93 pct.
Supply and Demand Status: Limited
Quantity per package: 10000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 26 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 568-12615-1, 568-12615-1-ND, 1727-2329-1, 1727-2329-2, 568-12615-2-ND, 568-12615-6-ND, 568-12615-6, 568-12615-2, 934068607315, 1727-2329-6
MOSFET 30V P-Channel Trench MOSFET
MOSFET P-CH 30V 1A DFN1006B-3
MOSFET P-CH 30V 1A DFN1006B-3
MOSFET Transistor, P Channel, -1 A, -30 V, 0.43 ohm, -4.5 V, -700 mV RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF MOSFET Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMZB320UPEYL | 1727-PMZB320UPEYLDKR-ND | PMZB320UPEYL | 278-PMZB320UPEYL | 890116-PMZB320UPEYL | PMZB320UPEYL | PMZB320UPEYL | PMZB320UPEYL | 68Y7857 |
| Product Name | 30 V, P-channel Trench MOSFET | Single FETs, MOSFETs | P-Channel 30V DFN MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMZB320UPEYL | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet Transistor, P Channel, -1 A, -30 V, 0.43 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia | |
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | -30 volts | 30 volts | |||||||
| IDSS | -1000 milliamps | 1000 milliamps | |||||||
| VGS(off) | 8 volts | ||||||||
| PD | 350 milliwatts | 350 milliwatts |
