N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 80V 1.1A (Ta) 400mW (Ta), 6.25W (Tc) Surface Mount DFN1010D-3
N-Channel 80V 1.1A (Ta) 400mW (Ta), 6.25W (Tc) Surface Mount DFN1010D-3
N-Channel 80V 1.1A (Ta) 400mW (Ta), 6.25W (Tc) Surface Mount DFN1010D-3
PMXB360ENEA - 80 V, N-channel Trench MOSFET DFN 3-Pin Product overview: PMXB360ENEAZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMXB360ENEAZ can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1325293-PMXB360ENEAZ
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 5,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 450mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 400mW, 6.25W (Tc)
Supplier Device Package: DFN1010D-3
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 3-XDFN Exposed Pad
ECCN: EAR99
Fake Threat In the Open Market: 80
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: PMXB360ENEA,PMXB360E
Base Product Number: PMXB360
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant
MOSFET Transistor, N Channel, 1.1 A, 80 V, 0.345 ohm, 10 V, 1.7 V RoHS Compliant: Yes
MOSFET 80 V, N-channel Trench MOSFET
MOSFET N-CH 80V 1.1A DFN1010D-3
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMXB360ENEAZ | 1727-PMXB360ENEAZDKR-ND | 278-PMXB360ENEAZ | 1325293-PMXB360ENEAZ | 68Y7847 | PMXB360ENEAZ | PMXB360ENEAZ |
| Product Name | 80 V, N-channel Trench MOSFET | Single FETs, MOSFETs | N-Channel 80 V DFN MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet Transistor, N Channel, 1.1 A, 80 V, 0.345 Ohm, 10 V, 1.7 V Rohs Compliant Nexperia | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 80 volts | ||||||
| IDSS | 1100 milliamps | ||||||
| VGS(off) | 20 volts | ||||||
| PD | 400 milliwatts | 400 to 6250 milliwatts |
