N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Win Source Part Number: 1022310-PMPB95ENEAX
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020MD-6
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 1727-2705-6,568-1322
Base Product Number: PMPB95
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6
N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6
N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6
PMPB95ENEA - 80 V, single N-channel Trench MOSFET DFN 6-Pin Product overview: PMPB95ENEAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB95ENEAX can be used for catalog matching and distributor lookup.
MOSFET N-CH 80V 2.8A DFN2020MD-6
MOSFET N-CH 80V 2.8A DFN2020MD-6
MOSFET 80V single N-channel Trench MOSFET
| Nexperia B.V. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMPB95ENEAX | 1022310-PMPB95ENEAX | 1727-2705-2-ND | 278-PMPB95ENEAX | PMPB95ENEAX | PMPB95ENEAX | PMPB95ENEAX |
| Product Name | 80 V, single N-channel Trench MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | N-Channel 80 V DFN MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 80 volts | 80 volts | |||||
| IDSS | 4100 milliamps | 2800 milliamps | |||||
| VGS(off) | 1.7 volts |