Nexperia B.V. 80 V, single N-channel Trench MOSFET PMPB95ENEAX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
80 V, single N-channel Trench MOSFET - PMPB95ENEAX - Nexperia B.V.
Nijmegen, Netherlands
80 V, single N-channel Trench MOSFET
PMPB95ENEAX
80 V, single N-channel Trench MOSFET PMPB95ENEAX
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Exposed drain pad for excellent thermal conduction
  • Tin-plated 100 % solderable side pads for optical solder inspection
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1022310-PMPB95ENEAX - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1022310-PMPB95ENEAX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1022310-PMPB95ENEAX
Win Source Part Number: 1022310-PMPB95ENEAX Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020MD-6 Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Nexperia USA Inc. Other Names: 1727-2705-6,568-1322 4-6,PMPB95ENEAX-ND,1 727-2705-1,568-13224 -1,1727-2705-2,568-1 3224-2,934067476115, 2156-PMPB95ENEAX-172 7,568-13224-2-ND,568 -13224-1-ND,568-1322 4-6-ND Base Product Number: PMPB95 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1022310-PMPB95ENEAX
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020MD-6
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 1727-2705-6,568-13224-6,PMPB95ENEAX-ND,1727-2705-1,568-13224-1,1727-2705-2,568-13224-2,934067476115,2156-PMPB95ENEAX-1727,568-13224-2-ND,568-13224-1-ND,568-13224-6-ND
Base Product Number: PMPB95
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2705-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2705-2-ND
Single FETs, MOSFETs 1727-2705-2-ND
N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6

N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2705-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2705-1-ND
Single FETs, MOSFETs 1727-2705-1-ND
N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6

N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2705-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2705-6-ND
Single FETs, MOSFETs 1727-2705-6-ND
N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6

N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Singapore
N-Channel 80 V DFN MOSFET Transistor
278-PMPB95ENEAX
N-Channel 80 V DFN MOSFET Transistor 278-PMPB95ENEAX
PMPB95ENEA - 80 V, single N-channel Trench MOSFET DFN 6-Pin Product overview: PMPB95ENEAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB95ENEAX can be used for catalog matching and distributor lookup.

PMPB95ENEA - 80 V, single N-channel Trench MOSFET DFN 6-Pin Product overview: PMPB95ENEAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB95ENEAX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - PMPB95ENEAX - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMPB95ENEAX
Single FETs, MOSFETs PMPB95ENEAX
MOSFET N-CH 80V 2.8A DFN2020MD-6

MOSFET N-CH 80V 2.8A DFN2020MD-6

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB95ENEAX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMPB95ENEAX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMPB95ENEAX
MOSFET N-CH 80V 2.8A DFN2020MD-6

MOSFET N-CH 80V 2.8A DFN2020MD-6

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 80V single N-channel Trench MOSFET

MOSFET 80V single N-channel Trench MOSFET

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMPB95ENEAX 1022310-PMPB95ENEAX 1727-2705-2-ND 278-PMPB95ENEAX PMPB95ENEAX PMPB95ENEAX PMPB95ENEAX
Product Name 80 V, single N-channel Trench MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs N-Channel 80 V DFN MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 80 volts 80 volts
IDSS 4100 milliamps 2800 milliamps
VGS(off) 1.7 volts
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