Nexperia B.V. 80 V, single N-channel Trench MOSFET PMPB95ENEAX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
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Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
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Suppliers

Company
Product
Description
Supplier Links
80 V, single N-channel Trench MOSFET - PMPB95ENEAX - Nexperia B.V.
Nijmegen, Netherlands
80 V, single N-channel Trench MOSFET
PMPB95ENEAX
80 V, single N-channel Trench MOSFET PMPB95ENEAX
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Exposed drain pad for excellent thermal conduction
  • Tin-plated 100 % solderable side pads for optical solder inspection
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2705-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2705-2-ND
Single FETs, MOSFETs 1727-2705-2-ND
N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6

N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2705-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2705-1-ND
Single FETs, MOSFETs 1727-2705-1-ND
N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6

N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2705-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2705-6-ND
Single FETs, MOSFETs 1727-2705-6-ND
N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6

N-Channel 80V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - PMPB95ENEAX - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMPB95ENEAX
Single FETs, MOSFETs PMPB95ENEAX
MOSFET N-CH 80V 2.8A DFN2020MD-6

MOSFET N-CH 80V 2.8A DFN2020MD-6

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1022310-PMPB95ENEAX - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1022310-PMPB95ENEAX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1022310-PMPB95ENEAX
Win Source Part Number: 1022310-PMPB95ENEAX Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020MD-6 Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Nexperia USA Inc. Other Names: 1727-2705-6,568-1322 4-6,PMPB95ENEAX-ND,1 727-2705-1,568-13224 -1,1727-2705-2,568-1 3224-2,934067476115, 2156-PMPB95ENEAX-172 7,568-13224-2-ND,568 -13224-1-ND,568-1322 4-6-ND Base Product Number: PMPB95 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1022310-PMPB95ENEAX
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020MD-6
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 1727-2705-6,568-13224-6,PMPB95ENEAX-ND,1727-2705-1,568-13224-1,1727-2705-2,568-13224-2,934067476115,2156-PMPB95ENEAX-1727,568-13224-2-ND,568-13224-1-ND,568-13224-6-ND
Base Product Number: PMPB95
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Singapore
N-Channel 80 V DFN MOSFET Transistor
278-PMPB95ENEAX
N-Channel 80 V DFN MOSFET Transistor 278-PMPB95ENEAX
PMPB95ENEA - 80 V, single N-channel Trench MOSFET DFN 6-Pin Product overview: PMPB95ENEAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB95ENEAX can be used for catalog matching and distributor lookup.

PMPB95ENEA - 80 V, single N-channel Trench MOSFET DFN 6-Pin Product overview: PMPB95ENEAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB95ENEAX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 80V single N-channel Trench MOSFET

MOSFET 80V single N-channel Trench MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB95ENEAX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMPB95ENEAX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMPB95ENEAX
MOSFET N-CH 80V 2.8A DFN2020MD-6

MOSFET N-CH 80V 2.8A DFN2020MD-6

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMPB95ENEAX 1727-2705-2-ND PMPB95ENEAX 1022310-PMPB95ENEAX 278-PMPB95ENEAX PMPB95ENEAX PMPB95ENEAX
Product Name 80 V, single N-channel Trench MOSFET Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single N-Channel 80 V DFN MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 80 volts 80 volts
IDSS 4100 milliamps 2800 milliamps
VGS(off) 1.7 volts
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