Nexperia B.V. 30 V, N-channel Trench MOSFET PMPB13XNEAX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - PMPB13XNEAX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMPB13XNEAXTR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMPB13XNEAX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMPB13XNEAX
30 V, N-channel Trench MOSFET PMPB13XNEAX
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Trench MOSFET technology
  • Side wettable flanks for optical solder inspection
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMPB13XNEAXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB13XNEAXTR-ND
Single FETs, MOSFETs 1727-PMPB13XNEAXTR-ND
PMPB13XNEA/SOT1220/S OT1220

PMPB13XNEA/SOT1220/SOT1220

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMPB13XNEAX
MOSFET PMPB13XNEAX
MOSFET PMPB13XNEA

MOSFET PMPB13XNEA

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Technical Specifications

  Nexperia B.V. DigiKey VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMPB13XNEAX 1727-PMPB13XNEAXTR-ND PMPB13XNEAX
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 8000 milliamps
VGS(off) 8 volts
PD 1.7 milliwatts
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