Nexperia B.V. 20 V, P-channel Trench MOSFET PMV50XPAR

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power dissipation capability of 1096 mW AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
  • 20 V, P-channel Trench MOSFET - PMV50XPAR - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMV50XPARDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMV50XPARCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMV50XPARTR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power dissipation capability of 1096 mW AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - PMV50XPAR - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMV50XPAR
20 V, P-channel Trench MOSFET PMV50XPAR
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power dissipation capability of 1096 mW AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Low on-state resistance
  • Trench MOSFET technology
  • Enhanced power dissipation capability of 1096 mW
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMV50XPARDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV50XPARDKR-ND
Single FETs, MOSFETs 1727-PMV50XPARDKR-ND
PMV50XPA/SOT23/TO-23 6AB

PMV50XPA/SOT23/TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMV50XPARCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV50XPARCT-ND
Single FETs, MOSFETs 1727-PMV50XPARCT-ND
PMV50XPA/SOT23/TO-23 6AB

PMV50XPA/SOT23/TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMV50XPARTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV50XPARTR-ND
Single FETs, MOSFETs 1727-PMV50XPARTR-ND
PMV50XPA/SOT23/TO-23 6AB

PMV50XPA/SOT23/TO-236AB

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMV50XPAR 1727-PMV50XPARDKR-ND
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts
IDSS -3600 milliamps
VGS(off) 10 volts
PD 490 milliwatts
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