P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 surface-mounted plastic package, measuring 2.9 mm x 1.3 mm x 1 mm, using Trench MOSFET technology. It has a drain-source voltage rating of -20 V, a gate-source voltage range of -10 V to 10 V, and a continuous drain current of -3.6 A at -4.5 V gate-source voltage and 25 °C ambient temperature. The on-state resistance is 47 mΩ to 60 mΩ at -4.5 V gate-source voltage and -3.6 A drain current. Power dissipation is rated at 1096 mW when mounted on an FR4 PCB with a 6 cm² drain pad. The device is AEC-Q101 qualified and operates with a junction temperature range of -55 °C to 150 °C.
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMV50XPA/SOT23/TO-23
PMV50XPA/SOT23/TO-23
PMV50XPA/SOT23/TO-23
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | PMV50XPAR | 1727-PMV50XPARDKR-ND |
| Product Name | 20 V, P-channel Trench MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | -20 volts | |
| IDSS | -3600 milliamps | |
| VGS(off) | 10 volts | |
| PD | 490 milliwatts |
