N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089803-PMV65UNER
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 490mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 6nC @ 10V
Max Input Capacitance: 291pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 73 mOhm @ 2.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
PMV65UNE - 20 V, N-channel Trench MOSFET TO-236 3-Pin Product overview: PMV65UNER from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV65UNER can be used for catalog matching and distributor lookup.
N-Channel 20V 2.8A (Ta) 490mW (Ta) Surface Mount TO-236AB
N-Channel 20V 2.8A (Ta) 490mW (Ta) Surface Mount TO-236AB
N-Channel 20V 2.8A (Ta) 490mW (Ta) Surface Mount TO-236AB
MOSFET PMV65UNE/TO-236AB/RE
MOSFET N-CH 20V 2.8A TO236AB
MOSFET N-CH 20V 2.8A TO236AB
MOSFET, N-CH, 20V, 2.8A, TO-236AB ROHS COMPLIANT: YES
20V 2.8A 73mΩ@2.8A,4.5V 490mW 1V@250uA null SOT-23-3 MOSFETs ROHS
| Nexperia B.V. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV65UNER | 1089803-PMV65UNER | 278-PMV65UNER | 1727-PMV65UNERDKR-ND | PMV65UNER | PMV65UNER | PMV65UNER | 74AH1169 | PMV65UNER |
| Product Name | 20 V, N-channel Trench MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV65UNER | N-Channel 20 V MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 20V, 2.8A, To-236Ab Rohs Compliant Nexperia | Triode/MOS Tube/Transistor >> MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | |||||
| IDSS | 3400 milliamps | 2800 milliamps | |||||||
| VGS(off) | 8 volts | 1 volts | |||||||
| PD | 490 milliwatts | 490 milliwatts | 490 milliwatts | 490 milliwatts |
