N-channel enhancement mode Field-Effect Transistor (FET) in a small TO-236AB (SOT23-1) surface-mounted plastic package measuring 2.9 mm × 2.5 mm × 1 mm, using Trench MOSFET technology. It has a drain-source voltage rating of 20 V, a gate-source voltage rating of ±12 V, and a continuous drain current of 4.2 A at 25 °C with a standard footprint. The drain-source on-state resistance is 24 to 32 mΩ at VGS = 4.5 V and ID = 4.2 A. The junction temperature range is -55 °C to 150 °C. The device meets IEC 60134 for absolute maximum ratings and is not automotive qualified.
N-channel enhancement mode Field-Effect Transistor (FET) in a small TO-236AB (SOT23-1) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMV30UN-T/SOT23/TO-2
PMV30UN-T/SOT23/TO-2
PMV30UN-T/SOT23/TO-2
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | PMV30UN-TR | 1727-PMV30UN-TRCT-ND |
| Product Name | 20 V, N-channel Trench MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | 20 volts | |
| IDSS | 5400 milliamps | |
| VGS(off) | 12 volts |
