N-channel 100V MOSFET with a 16 mΩ drain-source on-state resistance in a D2PAK package, designed for DC-to-DC converters, motor control, load switching, and server power supplies. The device has a maximum drain-source voltage of 100 V, continuous drain current of 57 A at 25°C, and total power dissipation of 148 W. Junction temperature ranges from -55°C to 175°C, with a thermal resistance from junction to mounting base of 0.56 to 1.01 K/W. It features an avalanche energy rating of 101 mJ and meets standard level gate drive requirements. The package is SOT404, with dimensions of 15.80 mm length, 10.30 mm width, and 4.50 mm height.
Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1090328-PSMN016-100B
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 148W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 57A (Tj)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 2404pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
PSMN016-100BS - N-channel 100V 16 mΩ standard level MOSFET in D2PAK D2PAK 3-Pin Product overview: PSMN016-100BS,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN016-100BS,11
N-Channel 100V 57A (Tj) 148W (Tc) Surface Mount D2PAK
N-Channel 100V 57A (Tj) 148W (Tc) Surface Mount D2PAK
N-Channel 100V 57A (Tj) 148W (Tc) Surface Mount D2PAK
MOSFET, N CHANNEL, 100V, 57A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:57A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 100V 57A D2PAK
| Nexperia B.V. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PSMN016-100BS,118 | 1090328-PSMN016-100BS,118 | 278-PSMN016-100BS,118 | 1727-7208-2-ND | 96T7351 | PSMN016-100BS,118 |
| Product Name | N-channel 100V 16 mOhm standard level MOSFET in D2PAK | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN016-100BS,118 | N-Channel 100V MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N Channel, 100V, 57A, D2Pak; Channel Type Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||
| Package Type | SOT404 SOT404 | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts |
