Nexperia B.V. 30 V, N-channel Trench MOSFET PMV20XNER

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1200 mW ElectroStatic Discharge (ESD) protection: 2 kV HBM Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - PMV20XNER - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMV20XNERCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMV20XNERDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMV20XNERTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV20XNER - 1089778-PMV20XNER - Win Source Electronics
    Win Source Electronics
  • Mosfet Transistor, N Channel, 5.7 A, 30 V, 0.019 Ohm, 4.5 V, 650 Mv Rohs Compliant Nexperia - 68Y7842 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMV20XNER - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single FETs, MOSFETs - PMV20XNER - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1200 mW ElectroStatic Discharge (ESD) protection: 2 kV HBM Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMV20XNER - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMV20XNER
30 V, N-channel Trench MOSFET PMV20XNER
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1200 mW ElectroStatic Discharge (ESD) protection: 2 kV HBM Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Low threshold voltage
  • Enhanced power dissipation capability of 1200 mW
  • ElectroStatic Discharge (ESD) protection: 2 kV HBM

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMV20XNERCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV20XNERCT-ND
Single FETs, MOSFETs 1727-PMV20XNERCT-ND
N-Channel 30V 5.7A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB

N-Channel 30V 5.7A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMV20XNERDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV20XNERDKR-ND
Single FETs, MOSFETs 1727-PMV20XNERDKR-ND
N-Channel 30V 5.7A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB

N-Channel 30V 5.7A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMV20XNERTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV20XNERTR-ND
Single FETs, MOSFETs 1727-PMV20XNERTR-ND
N-Channel 30V 5.7A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB

N-Channel 30V 5.7A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 30 V MOSFET Transistor
278-PMV20XNER
N-Channel 30 V MOSFET Transistor 278-PMV20XNER
PMV20XNE - 30 V, N-channel Trench MOSFET TO-236 3-Pin Product overview: PMV20XNER from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV20XNER can be used for catalog matching and distributor lookup.

PMV20XNE - 30 V, N-channel Trench MOSFET TO-236 3-Pin Product overview: PMV20XNER from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV20XNER can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV20XNER - 1089778-PMV20XNER - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV20XNER
1089778-PMV20XNER
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV20XNER 1089778-PMV20XNER
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1089778-PMV20XNER Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 510mW (Ta), 6.94W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.7A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 18.6nC @ 4.5V Max Input Capacitance: 1150pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 23 mOhm @ 5.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089778-PMV20XNER
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 510mW (Ta), 6.94W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.7A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 18.6nC @ 4.5V
Max Input Capacitance: 1150pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 23 mOhm @ 5.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Mosfet Transistor, N Channel, 5.7 A, 30 V, 0.019 Ohm, 4.5 V, 650 Mv Rohs Compliant Nexperia - 68Y7842 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 5.7 A, 30 V, 0.019 Ohm, 4.5 V, 650 Mv Rohs Compliant Nexperia
68Y7842
Mosfet Transistor, N Channel, 5.7 A, 30 V, 0.019 Ohm, 4.5 V, 650 Mv Rohs Compliant Nexperia 68Y7842
MOSFET Transistor, N Channel, 5.7 A, 30 V, 0.019 ohm, 4.5 V, 650 mV RoHS Compliant: Yes

MOSFET Transistor, N Channel, 5.7 A, 30 V, 0.019 ohm, 4.5 V, 650 mV RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMV20XNER - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMV20XNER
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMV20XNER
MOSFET N-CH 30V 5.7A TO236AB

MOSFET N-CH 30V 5.7A TO236AB

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMV20XNER
MOSFET PMV20XNER
MOSFET 30V N-channel Trench MOSFET

MOSFET 30V N-channel Trench MOSFET

Buy Now Datasheet
Single FETs, MOSFETs - PMV20XNER - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMV20XNER
Single FETs, MOSFETs PMV20XNER
MOSFET N-CH 30V 5.7A TO236AB

MOSFET N-CH 30V 5.7A TO236AB

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMV20XNER 1727-PMV20XNERCT-ND 278-PMV20XNER 1089778-PMV20XNER 68Y7842 PMV20XNER PMV20XNER PMV20XNER
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs N-Channel 30 V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV20XNER Mosfet Transistor, N Channel, 5.7 A, 30 V, 0.019 Ohm, 4.5 V, 650 Mv Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts 30 volts 30 volts
IDSS 7200 milliamps 5700 milliamps
VGS(off) 12 volts
PD 510 milliwatts 510 to 6940 milliwatts 510 milliwatts
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