N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package measuring 1.1 × 1.0 × 0.37 mm with an exposed drain pad for thermal conduction. The device features Trench MOSFET technology, a drain-source on-state resistance of 42 mΩ at V_GS = 4.5 V and T_j = 25 °C, and 1 kV ESD protection. It operates with a maximum drain-source voltage of 20 V and a continuous drain current of 3.2 A under specified conditions. Applications include low-side load switching, power management in portable devices, LED driving, and DC-to-DC conversion.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel JFET, 20V, 3-Pin DFN Product overview: PMXB43UNEZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMXB43UNEZ can be used for catalog matching and distributor lookup.
MOSFET Transistor, N Channel, 3.2 A, 20 V, 0.042 ohm, 4.5 V, 650 mV RoHS Compliant: Yes
MOSFET N-CH 20V 3.2A DFN1010D-3
In a Pack of 25, 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB43UNEZ
MOSFET N-CH 20V 3.2A DFN1010D-3
MOSFET 20 V, N-channel Trench MOSFET
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMXB43UNEZ | 278-PMXB43UNEZ | 68Y7849 | PMXB43UNEZ | 554-PMXB43UNEZ | PMXB43UNEZ | PMXB43UNEZ |
| Product Name | 20 V, N-channel Trench MOSFET | N-Channel 20V DFN MOSFET Transistor | Mosfet Transistor, N Channel, 3.2 A, 20 V, 0.042 Ohm, 4.5 V, 650 Mv Rohs Compliant Nexperia | Single FETs, MOSFETs | In a Pack of 25, 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB43UNEZ | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 3200 milliamps | 3200 milliamps | |||||
| VGS(off) | 8 volts | ||||||
| PD | 0.4000 milliwatts | 400 milliwatts | 400 milliwatts |
