Nexperia B.V. 20 V, N-channel Trench MOSFET PMXB43UNEZ

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction Very low Drain-Source on-state resistance RDSon = 42 mΩ 1 kV ESD protected Applications Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters
  • 20 V, N-channel Trench MOSFET - PMXB43UNEZ - Nexperia B.V.
    Nexperia B.V.
  • Mosfet Transistor, N Channel, 3.2 A, 20 V, 0.042 Ohm, 4.5 V, 650 Mv Rohs Compliant Nexperia - 68Y7849 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Single FETs, MOSFETs - PMXB43UNEZ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMXB43UNEZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • In a Pack of 25, 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB43UNEZ - 554-PMXB43UNEZ - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction Very low Drain-Source on-state resistance RDSon = 42 mΩ 1 kV ESD protected Applications Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package measuring 1.1 × 1.0 × 0.37 mm with an exposed drain pad for thermal conduction. The device features Trench MOSFET technology, a drain-source on-state resistance of 42 mΩ at V_GS = 4.5 V and T_j = 25 °C, and 1 kV ESD protection. It operates with a maximum drain-source voltage of 20 V and a continuous drain current of 3.2 A under specified conditions. Applications include low-side load switching, power management in portable devices, LED driving, and DC-to-DC conversion.

Datasheet Summary
Powered by GS/AI

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package measuring 1.1 × 1.0 × 0.37 mm with an exposed drain pad for thermal conduction. The device features Trench MOSFET technology, a drain-source on-state resistance of 42 mΩ at V_GS = 4.5 V and T_j = 25 °C, and 1 kV ESD protection. It operates with a maximum drain-source voltage of 20 V and a continuous drain current of 3.2 A under specified conditions. Applications include low-side load switching, power management in portable devices, LED driving, and DC-to-DC conversion.

Suppliers

Company
Product
Description
Supplier Links
20 V, N-channel Trench MOSFET - PMXB43UNEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, N-channel Trench MOSFET
PMXB43UNEZ
20 V, N-channel Trench MOSFET PMXB43UNEZ
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction Very low Drain-Source on-state resistance RDSon = 42 mΩ 1 kV ESD protected Applications Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
  • Exposed drain pad for excellent thermal conduction
  • Very low Drain-Source on-state resistance RDSon = 42 mΩ
  • 1 kV ESD protected

Applications

  • Low-side load switch and charging switch for portable devices
  • Power management in battery-driven portables
  • LED driver
  • DC-to-DC converters
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
N-Channel 20V DFN MOSFET Transistor
278-PMXB43UNEZ
N-Channel 20V DFN MOSFET Transistor 278-PMXB43UNEZ
N-Channel JFET, 20V, 3-Pin DFN Product overview: PMXB43UNEZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMXB43UNEZ can be used for catalog matching and distributor lookup.

N-Channel JFET, 20V, 3-Pin DFN Product overview: PMXB43UNEZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMXB43UNEZ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 3.2 A, 20 V, 0.042 Ohm, 4.5 V, 650 Mv Rohs Compliant Nexperia - 68Y7849 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 3.2 A, 20 V, 0.042 Ohm, 4.5 V, 650 Mv Rohs Compliant Nexperia
68Y7849
Mosfet Transistor, N Channel, 3.2 A, 20 V, 0.042 Ohm, 4.5 V, 650 Mv Rohs Compliant Nexperia 68Y7849
MOSFET Transistor, N Channel, 3.2 A, 20 V, 0.042 ohm, 4.5 V, 650 mV RoHS Compliant: Yes

MOSFET Transistor, N Channel, 3.2 A, 20 V, 0.042 ohm, 4.5 V, 650 mV RoHS Compliant: Yes

Supplier's Site
Single FETs, MOSFETs - PMXB43UNEZ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMXB43UNEZ
Single FETs, MOSFETs PMXB43UNEZ
MOSFET N-CH 20V 3.2A DFN1010D-3

MOSFET N-CH 20V 3.2A DFN1010D-3

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMXB43UNEZ
MOSFET PMXB43UNEZ
MOSFET 20 V, N-channel Trench MOSFET

MOSFET 20 V, N-channel Trench MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMXB43UNEZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMXB43UNEZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMXB43UNEZ
MOSFET N-CH 20V 3.2A DFN1010D-3

MOSFET N-CH 20V 3.2A DFN1010D-3

Supplier's Site
In a Pack of 25, 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB43UNEZ - 554-PMXB43UNEZ - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
In a Pack of 25, 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB43UNEZ
554-PMXB43UNEZ
In a Pack of 25, 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB43UNEZ 554-PMXB43UNEZ
In a Pack of 25, 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB43UNEZ

In a Pack of 25, 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB43UNEZ

Supplier's Site

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMXB43UNEZ 278-PMXB43UNEZ 68Y7849 PMXB43UNEZ PMXB43UNEZ PMXB43UNEZ 554-PMXB43UNEZ
Product Name 20 V, N-channel Trench MOSFET N-Channel 20V DFN MOSFET Transistor Mosfet Transistor, N Channel, 3.2 A, 20 V, 0.042 Ohm, 4.5 V, 650 Mv Rohs Compliant Nexperia Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs In a Pack of 25, 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB43UNEZ
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
V(BR)DSS 20 volts 20 volts
IDSS 3200 milliamps 3200 milliamps
VGS(off) 8 volts
PD 0.4000 milliwatts 400 milliwatts 400 milliwatts
Unlock Full Specs
to access all available technical data