P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 30V 7.5A (Ta) 2W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
MOSFET P-CH 30V 7.5A DFN2020MD-6
MOSFET P-CH 30V 7.5A DFN2020MD-6
MOSFET, P-CH, -30V, -10.6A, 150DEG C, 2W ROHS COMPLIANT: YES
MOSFET P-CH 30V 7.5A DFN2020MD-6
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMPB16EPX | 1727-PMPB16EPXTR-ND | 41AH9904 | PMPB16EPX |
| Product Name | 30 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, P-Ch, -30V, -10.6A, 150Deg C, 2W Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | ||
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | -30 volts | |||
| IDSS | -10600 milliamps | |||
| VGS(off) | -1.5 volts |