P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package measuring 2 mm x 2 mm x 0.65 mm with an exposed drain pad for thermal conduction. It features logic-level compatibility, Trench MOSFET technology, and side wettable flanks for optical solder inspection. The device has a drain-source voltage rating of -30 V, a continuous drain current of -7.5 A at 25 °C with a gate-source voltage of -10 V, and a drain-source on-state resistance of 16 to 20 mΩ under the same conditions. Total power dissipation is rated at 2 W at 25 °C. Applications include charging switches for portable devices, DC-to-DC converters, and power management in battery-driven systems.
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 30V 7.5A (Ta) 2W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
MOSFET P-CH 30V 7.5A DFN2020MD-6
MOSFET P-CH 30V 7.5A DFN2020MD-6
MOSFET P-CH 30V 7.5A DFN2020MD-6
MOSFET, P-CH, -30V, -10.6A, 150DEG C, 2W ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMPB16EPX | 1727-PMPB16EPXTR-ND | PMPB16EPX | 41AH9904 |
| Product Name | 30 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -30V, -10.6A, 150Deg C, 2W Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | -30 volts | |||
| IDSS | -10600 milliamps | |||
| VGS(off) | 25 volts | |||
| PD | 2 milliwatts |
