Nexperia B.V. TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMXB40UNE PMXB40UNE

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1089810-PMXB40UNE Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DFN1010D-3 Dimension: 3-XDFN Exposed Pad Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 3.2A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 11.6nC @ 4.5V Max Input Capacitance: 556pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 45 mOhm @ 3.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1089810-PMXB40UNE Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DFN1010D-3 Dimension: 3-XDFN Exposed Pad Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 3.2A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 11.6nC @ 4.5V Max Input Capacitance: 556pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 45 mOhm @ 3.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMXB40UNE - 1089810-PMXB40UNE - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMXB40UNE
1089810-PMXB40UNE
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMXB40UNE 1089810-PMXB40UNE
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1089810-PMXB40UNE Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DFN1010D-3 Dimension: 3-XDFN Exposed Pad Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 3.2A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 11.6nC @ 4.5V Max Input Capacitance: 556pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 45 mOhm @ 3.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089810-PMXB40UNE
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DFN1010D-3
Dimension: 3-XDFN Exposed Pad
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.2A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 11.6nC @ 4.5V
Max Input Capacitance: 556pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 45 mOhm @ 3.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1089810-PMXB40UNE
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMXB40UNE
Polarity N-Channel; N-Channel
V(BR)DSS 12 volts
PD 400 to 8330 milliwatts
Unlock Full Specs
to access all available technical data