Nexperia B.V. 12 V, N-channel Trench MOSFET PMZ170VNEYL

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package measuring 1.0 x 0.6 x 0.48 mm, using Trench MOSFET technology. The device features a drain-source voltage rating of 12 V, a drain current of 1.5 A at V_GS = 4.5 V, and a typical drain-source on-state resistance of 170 mΩ at V_GS = 4.5 V and I_D = 1.2 A. ElectroStatic Discharge (ESD) protection is typically > 2 kV. It operates with a gate-source threshold voltage range of 0.37 to 0.82 V and has a maximum junction temperature of 150 °C. The part meets IEC 60134 for limiting values.