P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 30V 7.7A (Ta) 1.9W (Ta), 13W (Tc) Surface Mount DFN2020M-6
P-Channel 30V 7.7A (Ta) 1.9W (Ta), 13W (Tc) Surface Mount DFN2020M-6
P-Channel 30V 7.7A (Ta) 1.9W (Ta), 13W (Tc) Surface Mount DFN2020M-6
MOSFET, P-CH, 30V, 11A, 150DEG C, 3.8W ROHS COMPLIANT: YES
P-CHANNEL TRENCH MOSFET
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMPB17EPX | 1727-PMPB17EPXCT-ND | 29AK3934 | PMPB17EPX |
| Product Name | 30 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, P-Ch, 30V, 11A, 150Deg C, 3.8W Rohs Compliant Nexperia | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | -30 volts | 30 volts | ||
| IDSS | -11000 milliamps | 7700 milliamps | ||
| VGS(off) | 20 volts | |||
| PD | 1.9 milliwatts | 1900 milliwatts |