Nexperia B.V. 30 V, P-channel Trench MOSFET PMPB17EPX

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management
  • 30 V, P-channel Trench MOSFET - PMPB17EPX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMPB17EPXDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB17EPXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB17EPXTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - PMPB17EPX - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, P-Ch, 30V, 11A, 150Deg C, 3.8W Rohs Compliant Nexperia - 29AK3934 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, P-channel Trench MOSFET - PMPB17EPX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, P-channel Trench MOSFET
PMPB17EPX
30 V, P-channel Trench MOSFET PMPB17EPX
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Trench MOSFET technology
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Exposed drain pad for excellent thermal conduction

Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Power management in battery-driven portable devices
  • Hard disk and computing power management
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMPB17EPXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB17EPXDKR-ND
Single FETs, MOSFETs 1727-PMPB17EPXDKR-ND
P-Channel 30V 7.7A (Ta) 1.9W (Ta), 13W (Tc) Surface Mount DFN2020M-6

P-Channel 30V 7.7A (Ta) 1.9W (Ta), 13W (Tc) Surface Mount DFN2020M-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB17EPXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB17EPXCT-ND
Single FETs, MOSFETs 1727-PMPB17EPXCT-ND
P-Channel 30V 7.7A (Ta) 1.9W (Ta), 13W (Tc) Surface Mount DFN2020M-6

P-Channel 30V 7.7A (Ta) 1.9W (Ta), 13W (Tc) Surface Mount DFN2020M-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB17EPXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB17EPXTR-ND
Single FETs, MOSFETs 1727-PMPB17EPXTR-ND
P-Channel 30V 7.7A (Ta) 1.9W (Ta), 13W (Tc) Surface Mount DFN2020M-6

P-Channel 30V 7.7A (Ta) 1.9W (Ta), 13W (Tc) Surface Mount DFN2020M-6

Buy Now Datasheet
Single FETs, MOSFETs - PMPB17EPX - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMPB17EPX
Single FETs, MOSFETs PMPB17EPX
P-CHANNEL TRENCH MOSFET

P-CHANNEL TRENCH MOSFET

Supplier's Site Datasheet
Mosfet, P-Ch, 30V, 11A, 150Deg C, 3.8W Rohs Compliant Nexperia - 29AK3934 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 30V, 11A, 150Deg C, 3.8W Rohs Compliant Nexperia
29AK3934
Mosfet, P-Ch, 30V, 11A, 150Deg C, 3.8W Rohs Compliant Nexperia 29AK3934
MOSFET, P-CH, 30V, 11A, 150DEG C, 3.8W ROHS COMPLIANT: YES

MOSFET, P-CH, 30V, 11A, 150DEG C, 3.8W ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ODG (Origin Data Global) Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMPB17EPX 1727-PMPB17EPXDKR-ND PMPB17EPX 29AK3934
Product Name 30 V, P-channel Trench MOSFET Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, P-Ch, 30V, 11A, 150Deg C, 3.8W Rohs Compliant Nexperia
Polarity P-Channel P-Channel P-Channel; P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -30 volts 30 volts
IDSS -11000 milliamps 7700 milliamps
VGS(off) -1.7 volts
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