N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 surface-mounted plastic package using Trench MOSFET technology, with a 60 V drain-source voltage, 2.2 A continuous drain current at 25 ⁰C, and an on-state resistance of 88 to 117 mΩ at 10 V gate-source voltage. The device supports a maximum junction temperature of 175 ⁰C and provides ESD protection exceeding 2 kV HBM (class H2).
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 60V 2.2A (Ta) 615mW (Ta), 7.5W (Tc) Surface Mount TO-236AB
N-Channel 60V 2.2A (Ta) 615mW (Ta), 7.5W (Tc) Surface Mount TO-236AB
N-Channel 60V 2.2A (Ta) 615mW (Ta), 7.5W (Tc) Surface Mount TO-236AB
PMV88ENE/SOT23/TO-23
PMV88ENE/SOT23/TO-23
MOSFET, N-CH, 60V, 2.2A, SOT-23 ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Acme Chip Technology Co., Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV88ENER | 1727-PMV88ENERDKR-ND | PMV88ENER | PMV88ENER | 26AK2762 |
| Product Name | 60 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 2.2A, Sot-23 Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 60 volts | 60 volts | |||
| IDSS | 2200 milliamps | 2200 milliamps | |||
| VGS(off) | 20 volts | ||||
| PD | 615 milliwatts | 615 milliwatts |
