Nexperia B.V. 30 V, N-channel Trench MOSFET PMV52ENEAR

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMV52ENEAR - Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMV52ENEAR
30 V, N-channel Trench MOSFET PMV52ENEAR
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Extended temperature range Tj = 175 °C
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1339495-PMV52ENEAR - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1339495-PMV52ENEAR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1339495-PMV52ENEAR
Win Source Part Number: 1339495-PMV52ENEAR Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Automotive, AEC-Q101 Package: Tape & Reel Standard Package: 3,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Power Dissipation (Max): 630mW (Ta) , 5.7W (Tc) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 42 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Nexperia USA Inc. Base Product Number: PMV52 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V

Win Source Part Number: 1339495-PMV52ENEAR
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Power Dissipation (Max): 630mW (Ta) , 5.7W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 42 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Base Product Number: PMV52
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V

Buy Now Datasheet
Single FETs, MOSFETs - PMV52ENEAR - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMV52ENEAR
Single FETs, MOSFETs PMV52ENEAR
MOSFET N-CH 30V 3.2A TO236AB

MOSFET N-CH 30V 3.2A TO236AB

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-8666-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8666-2-ND
Single FETs, MOSFETs 1727-8666-2-ND
N-Channel 30V 3.2A (Ta) 630mW (Ta), 5.7W (Tc) Surface Mount TO-236AB

N-Channel 30V 3.2A (Ta) 630mW (Ta), 5.7W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8666-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8666-1-ND
Single FETs, MOSFETs 1727-8666-1-ND
N-Channel 30V 3.2A (Ta) 630mW (Ta), 5.7W (Tc) Surface Mount TO-236AB

N-Channel 30V 3.2A (Ta) 630mW (Ta), 5.7W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8666-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8666-6-ND
Single FETs, MOSFETs 1727-8666-6-ND
N-Channel 30V 3.2A (Ta) 630mW (Ta), 5.7W (Tc) Surface Mount TO-236AB

N-Channel 30V 3.2A (Ta) 630mW (Ta), 5.7W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMV52ENEAR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMV52ENEAR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMV52ENEAR
MOSFET N-CH 30V 3.2A TO236AB

MOSFET N-CH 30V 3.2A TO236AB

Supplier's Site
Mosfet, Aec-Q101, N-Ch, 30V, 3.2A, 0.63W Rohs Compliant Nexperia - 17AH9242 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 30V, 3.2A, 0.63W Rohs Compliant Nexperia
17AH9242
Mosfet, Aec-Q101, N-Ch, 30V, 3.2A, 0.63W Rohs Compliant Nexperia 17AH9242
MOSFET, AEC-Q101, N-CH, 30V, 3.2A, 0.63W ROHS COMPLIANT: YES

MOSFET, AEC-Q101, N-CH, 30V, 3.2A, 0.63W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMV52ENEAR 1339495-PMV52ENEAR PMV52ENEAR 1727-8666-2-ND PMV52ENEAR 17AH9242
Product Name 30 V, N-channel Trench MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 30V, 3.2A, 0.63W Rohs Compliant Nexperia
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts 30 volts
IDSS 3200 milliamps 3200 milliamps
VGS(off) 1.5 volts
Unlock Full Specs
to access all available technical data

Similar Products

80 V, 1 A PNP medium power transistors - BC53-16PA,115 - Nexperia B.V.
Specs
Package Type SOT1061
View Details
5 suppliers
45 V, 500 mA PNP general-purpose transistors - BC807-25W,135 - Nexperia B.V.
Specs
Polarity NPN
Package Type SC-70
View Details
4 suppliers
45 V, 500 mA PNP general-purpose transistors - BC807-25W,115 - Nexperia B.V.
Specs
Polarity NPN
Package Type SC-70
View Details
8 suppliers
45 V, 500 mA PNP general-purpose transistors - BC807-25QCZ - Nexperia B.V.
Specs
Polarity NPN
Package Type SOT8009
View Details
5 suppliers