Nexperia B.V. 30 V, P-channel Trench MOSFET PMZB1200UPEYL

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Ultra thin package profile of 0.37 mm height Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
  • 30 V, P-channel Trench MOSFET - PMZB1200UPEYL - Nexperia B.V.
    Nexperia B.V.
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    DigiKey
  • Single FETs, MOSFETs - 1727-2325-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - PMZB1200UPEYL - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet Transistor, P Channel, -410 Ma, -30 V, 1.2 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia - 68Y7853 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Ultra thin package profile of 0.37 mm height Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
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Datasheet
Datasheet Summary
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The PMZB1200UPE is a P-channel enhancement mode MOSFET designed for surface mounting in a compact DFN1006B-3 (SOT883B) package. It operates with a maximum drain-source voltage of -30 V and can handle a continuous drain current of -410 mA at a gate-source voltage of -4.5 V. The on-state resistance is specified at 1.2 Ω under these conditions. This device features Trench MOSFET technology, which allows for low threshold voltage and fast switching capabilities. It also includes ESD protection greater than 2 kV HBM, making it suitable for various applications such as relay drivers, high-speed line drivers, and high-side load switches. The PMZB1200UPE is RoHS compliant, ensuring it meets environmental standards.

Datasheet Summary
Powered by GS/AI

The PMZB1200UPE is a P-channel enhancement mode MOSFET designed for surface mounting in a compact DFN1006B-3 (SOT883B) package. It operates with a maximum drain-source voltage of -30 V and can handle a continuous drain current of -410 mA at a gate-source voltage of -4.5 V. The on-state resistance is specified at 1.2 Ω under these conditions. This device features Trench MOSFET technology, which allows for low threshold voltage and fast switching capabilities. It also includes ESD protection greater than 2 kV HBM, making it suitable for various applications such as relay drivers, high-speed line drivers, and high-side load switches. The PMZB1200UPE is RoHS compliant, ensuring it meets environmental standards.

Suppliers

Company
Product
Description
Supplier Links
30 V, P-channel Trench MOSFET - PMZB1200UPEYL - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, P-channel Trench MOSFET
PMZB1200UPEYL
30 V, P-channel Trench MOSFET PMZB1200UPEYL
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Ultra thin package profile of 0.37 mm height Applications Relay driver High-speed line driver High-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Low threshold voltage
  • Very fast switching
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
  • Ultra thin package profile of 0.37 mm height

Applications

  • Relay driver
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2325-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2325-2-ND
Single FETs, MOSFETs 1727-2325-2-ND
P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3

P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2325-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2325-1-ND
Single FETs, MOSFETs 1727-2325-1-ND
P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3

P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2325-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2325-6-ND
Single FETs, MOSFETs 1727-2325-6-ND
P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3

P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMZB1200UPEYL
MOSFET PMZB1200UPEYL
MOSFET 30V P-Channel Trench MOSFET

MOSFET 30V P-Channel Trench MOSFET

Buy Now Datasheet
Single FETs, MOSFETs - PMZB1200UPEYL - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMZB1200UPEYL
Single FETs, MOSFETs PMZB1200UPEYL
MOSFET P-CH 30V 410MA DFN1006B-3

MOSFET P-CH 30V 410MA DFN1006B-3

Supplier's Site Datasheet
Mosfet Transistor, P Channel, -410 Ma, -30 V, 1.2 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia - 68Y7853 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -410 Ma, -30 V, 1.2 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia
68Y7853
Mosfet Transistor, P Channel, -410 Ma, -30 V, 1.2 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia 68Y7853
MOSFET Transistor, P Channel, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV RoHS Compliant: Yes

MOSFET Transistor, P Channel, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey VAST STOCK CO., LIMITED ODG (Origin Data Global) Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMZB1200UPEYL 1727-2325-2-ND PMZB1200UPEYL PMZB1200UPEYL 68Y7853
Product Name 30 V, P-channel Trench MOSFET Single FETs, MOSFETs MOSFET Single FETs, MOSFETs Mosfet Transistor, P Channel, -410 Ma, -30 V, 1.2 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia
MOSFET Operating Mode Enhancement
V(BR)DSS -30 volts 30 volts
IDSS -410000 milliamps 410 milliamps
VGS(off) 8 volts
PD 310 milliwatts 310 milliwatts
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