The PMZB1200UPE is a P-channel enhancement mode MOSFET designed for surface mounting in a compact DFN1006B-3 (SOT883B) package. It operates with a maximum drain-source voltage of -30 V and can handle a continuous drain current of -410 mA at a gate-source voltage of -4.5 V. The on-state resistance is specified at 1.2 Oc under these conditions. This device features Trench MOSFET technology, which allows for low threshold voltage and fast switching capabilities. It also includes ESD protection greater than 2 kV HBM, making it suitable for various applications such as relay drivers, high-speed line drivers, and high-side load switches. The PMZB1200UPE is RoHS compliant, ensuring it meets environmental standards.
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3
P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3
P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3
MOSFET P-CH 30V 410MA DFN1006B-3
MOSFET Transistor, P Channel, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV RoHS Compliant: Yes
MOSFET 30V P-Channel Trench MOSFET
| Nexperia B.V. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMZB1200UPEYL | 1727-2325-2-ND | PMZB1200UPEYL | 68Y7853 | PMZB1200UPEYL |
| Product Name | 30 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet Transistor, P Channel, -410 Ma, -30 V, 1.2 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia | MOSFET |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | -30 volts | 30 volts | |||
| IDSS | -410000 milliamps | 410 milliamps | |||
| VGS(off) | 8 volts | ||||
| PD | 310 milliwatts | 310 milliwatts |
