Nexperia B.V. 30 V, P-channel Trench MOSFET PMZB1200UPEYL

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Ultra thin package profile of 0.37 mm height Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
  • 30 V, P-channel Trench MOSFET - PMZB1200UPEYL - Nexperia B.V.
    Nexperia B.V.
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    DigiKey
  • Single FETs, MOSFETs - 1727-2325-6-ND - DigiKey
    DigiKey
  • Mosfet Transistor, P Channel, -410 Ma, -30 V, 1.2 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia - 68Y7853 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Single FETs, MOSFETs - PMZB1200UPEYL - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Ultra thin package profile of 0.37 mm height Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
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Datasheet
Datasheet Summary
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The PMZB1200UPE is a P-channel enhancement mode MOSFET designed for surface mounting in a compact DFN1006B-3 (SOT883B) package. It operates with a maximum drain-source voltage of -30 V and can handle a continuous drain current of -410 mA at a gate-source voltage of -4.5 V. The on-state resistance is specified at 1.2 Oc under these conditions. This device features Trench MOSFET technology, which allows for low threshold voltage and fast switching capabilities. It also includes ESD protection greater than 2 kV HBM, making it suitable for various applications such as relay drivers, high-speed line drivers, and high-side load switches. The PMZB1200UPE is RoHS compliant, ensuring it meets environmental standards.

Datasheet Summary
Powered by GS/AI

The PMZB1200UPE is a P-channel enhancement mode MOSFET designed for surface mounting in a compact DFN1006B-3 (SOT883B) package. It operates with a maximum drain-source voltage of -30 V and can handle a continuous drain current of -410 mA at a gate-source voltage of -4.5 V. The on-state resistance is specified at 1.2 Oc under these conditions. This device features Trench MOSFET technology, which allows for low threshold voltage and fast switching capabilities. It also includes ESD protection greater than 2 kV HBM, making it suitable for various applications such as relay drivers, high-speed line drivers, and high-side load switches. The PMZB1200UPE is RoHS compliant, ensuring it meets environmental standards.

Suppliers

Company
Product
Description
Supplier Links
30 V, P-channel Trench MOSFET - PMZB1200UPEYL - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, P-channel Trench MOSFET
PMZB1200UPEYL
30 V, P-channel Trench MOSFET PMZB1200UPEYL
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Ultra thin package profile of 0.37 mm height Applications Relay driver High-speed line driver High-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Low threshold voltage
  • Very fast switching
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
  • Ultra thin package profile of 0.37 mm height

Applications

  • Relay driver
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2325-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2325-2-ND
Single FETs, MOSFETs 1727-2325-2-ND
P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3

P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2325-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2325-1-ND
Single FETs, MOSFETs 1727-2325-1-ND
P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3

P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2325-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2325-6-ND
Single FETs, MOSFETs 1727-2325-6-ND
P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3

P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMZB1200UPEYL
MOSFET PMZB1200UPEYL
MOSFET 30V P-Channel Trench MOSFET

MOSFET 30V P-Channel Trench MOSFET

Buy Now Datasheet
Mosfet Transistor, P Channel, -410 Ma, -30 V, 1.2 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia - 68Y7853 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -410 Ma, -30 V, 1.2 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia
68Y7853
Mosfet Transistor, P Channel, -410 Ma, -30 V, 1.2 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia 68Y7853
MOSFET Transistor, P Channel, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV RoHS Compliant: Yes

MOSFET Transistor, P Channel, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - PMZB1200UPEYL - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMZB1200UPEYL
Single FETs, MOSFETs PMZB1200UPEYL
MOSFET P-CH 30V 410MA DFN1006B-3

MOSFET P-CH 30V 410MA DFN1006B-3

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMZB1200UPEYL 1727-2325-2-ND PMZB1200UPEYL 68Y7853 PMZB1200UPEYL
Product Name 30 V, P-channel Trench MOSFET Single FETs, MOSFETs MOSFET Mosfet Transistor, P Channel, -410 Ma, -30 V, 1.2 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS -30 volts 30 volts
IDSS -410000 milliamps 410 milliamps
VGS(off) 8 volts
PD 310 milliwatts 310 milliwatts
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