N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 60V 2.1A (Ta) 513mW (Ta), 6.4W (Tc) Surface Mount TO-236AB
N-Channel 60V 2.1A (Ta) 513mW (Ta), 6.4W (Tc) Surface Mount TO-236AB
N-Channel 60V 2.1A (Ta) 513mW (Ta), 6.4W (Tc) Surface Mount TO-236AB
MOSFET N-CH 60V 2.1A TO236AB
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089771-PMV120ENEAR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 513mW (Ta), 6.4W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.1A (Ta)
Gate-Source Threshold Voltage: 2.7V @ 250μA
Max Gate Charge: 7.4nC @ 10V
Max Input Capacitance: 275pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 123 mOhm @ 2.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
NEXPERIA - PMV120ENEAR - MOSFET, N- CH, 60V, 2.1A, TO-236AB
MOSFET, N- CH, 60V, 2.1A, TO-236AB; Transistor Polarity:N Channel; Continuous Drain Current Id:2.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.096ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 2.1A TO236AB
MOSFET PMV120ENEA/TO-236AB/
| Nexperia B.V. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Utmel Electronic Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV120ENEAR | 1727-2525-6-ND | PMV120ENEAR | 1089771-PMV120ENEAR | 554-PMV120ENEAR | 99Y2080 | PMV120ENEAR | PMV120ENEAR |
| Product Name | 60 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV120ENEAR | NEXPERIA - PMV120ENEAR - MOSFET, N- CH, 60V, 2.1A, TO-236AB | Mosfet, NCh, 60V, 2.1A, To-236Ab; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| Package Type | SOT23; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; TO-236AB (SOT23) | TO-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | ||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||||
| Transistor Grade / Operating Range | Automotive | |||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
