Nexperia B.V. 60 V, N-channel Trench MOSFET PMV120ENEAR

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 60 V, N-channel Trench MOSFET - PMV120ENEAR - Nexperia B.V.
    Nexperia B.V.
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV120ENEAR - 1089771-PMV120ENEAR - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - PMV120ENEAR - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 1727-2525-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2525-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2525-2-ND - DigiKey
    DigiKey
  • Mosfet, NCh, 60V, 2.1A, To-236Ab; Transistor Polarity Nexperia - 99Y2080 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMV120ENEAR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • NEXPERIA - PMV120ENEAR - MOSFET, N- CH, 60V, 2.1A, TO-236AB - 554-PMV120ENEAR - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, N-channel Trench MOSFET - PMV120ENEAR - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
60 V, N-channel Trench MOSFET
PMV120ENEAR
60 V, N-channel Trench MOSFET PMV120ENEAR
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Extended temperature range Tj = 175 °C
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV120ENEAR - 1089771-PMV120ENEAR - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV120ENEAR
1089771-PMV120ENEAR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV120ENEAR 1089771-PMV120ENEAR
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1089771-PMV120ENEAR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 513mW (Ta), 6.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2.1A (Ta) Gate-Source Threshold Voltage: 2.7V @ 250μA Max Gate Charge: 7.4nC @ 10V Max Input Capacitance: 275pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 123 mOhm @ 2.1A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089771-PMV120ENEAR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 513mW (Ta), 6.4W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.1A (Ta)
Gate-Source Threshold Voltage: 2.7V @ 250μA
Max Gate Charge: 7.4nC @ 10V
Max Input Capacitance: 275pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 123 mOhm @ 2.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - PMV120ENEAR - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMV120ENEAR
Single FETs, MOSFETs PMV120ENEAR
MOSFET N-CH 60V 2.1A TO236AB

MOSFET N-CH 60V 2.1A TO236AB

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2525-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2525-6-ND
Single FETs, MOSFETs 1727-2525-6-ND
N-Channel 60V 2.1A (Ta) 513mW (Ta), 6.4W (Tc) Surface Mount TO-236AB

N-Channel 60V 2.1A (Ta) 513mW (Ta), 6.4W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2525-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2525-1-ND
Single FETs, MOSFETs 1727-2525-1-ND
N-Channel 60V 2.1A (Ta) 513mW (Ta), 6.4W (Tc) Surface Mount TO-236AB

N-Channel 60V 2.1A (Ta) 513mW (Ta), 6.4W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2525-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2525-2-ND
Single FETs, MOSFETs 1727-2525-2-ND
N-Channel 60V 2.1A (Ta) 513mW (Ta), 6.4W (Tc) Surface Mount TO-236AB

N-Channel 60V 2.1A (Ta) 513mW (Ta), 6.4W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Mosfet, NCh, 60V, 2.1A, To-236Ab; Transistor Polarity Nexperia - 99Y2080 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, NCh, 60V, 2.1A, To-236Ab; Transistor Polarity Nexperia
99Y2080
Mosfet, NCh, 60V, 2.1A, To-236Ab; Transistor Polarity Nexperia 99Y2080
MOSFET, N- CH, 60V, 2.1A, TO-236AB; Transistor Polarity:N Channel; Continuous Drain Current Id:2.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.096ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

MOSFET, N- CH, 60V, 2.1A, TO-236AB; Transistor Polarity:N Channel; Continuous Drain Current Id:2.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.096ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMV120ENEAR
MOSFET PMV120ENEAR
MOSFET PMV120ENEA/TO-236AB/ REEL 7" Q3

MOSFET PMV120ENEA/TO-236AB/REEL 7" Q3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMV120ENEAR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMV120ENEAR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMV120ENEAR
MOSFET N-CH 60V 2.1A TO236AB

MOSFET N-CH 60V 2.1A TO236AB

Supplier's Site
NEXPERIA - PMV120ENEAR - MOSFET, N- CH, 60V, 2.1A, TO-236AB - 554-PMV120ENEAR - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
NEXPERIA - PMV120ENEAR - MOSFET, N- CH, 60V, 2.1A, TO-236AB
554-PMV120ENEAR
NEXPERIA - PMV120ENEAR - MOSFET, N- CH, 60V, 2.1A, TO-236AB 554-PMV120ENEAR
NEXPERIA - PMV120ENEAR - MOSFET, N- CH, 60V, 2.1A, TO-236AB

NEXPERIA - PMV120ENEAR - MOSFET, N- CH, 60V, 2.1A, TO-236AB

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMV120ENEAR 1089771-PMV120ENEAR PMV120ENEAR 1727-2525-6-ND 99Y2080 PMV120ENEAR PMV120ENEAR 554-PMV120ENEAR
Product Name 60 V, N-channel Trench MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV120ENEAR Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, NCh, 60V, 2.1A, To-236Ab; Transistor Polarity Nexperia MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs NEXPERIA - PMV120ENEAR - MOSFET, N- CH, 60V, 2.1A, TO-236AB
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
Package Type SOT23; SOT23 SOT3; SOT23; TO-236AB (SOT23) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 SOT23; TO-236-3, SC-59, SOT-23-3
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts 60 volts
PD 513 to 6400 milliwatts 513 milliwatts 513 milliwatts
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