N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMPBxEN - 30 V, N-channel Trench MOSFET DFN 6-Pin Product overview: PMPB20EN,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB20EN,115 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089732-PMPB20EN,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-DFN2020MD (2x2)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.2A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 10.8nC @ 10V
Max Input Capacitance: 435pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 19.5 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
N-Channel 30V 7.2A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
N-Channel 30V 7.2A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
N-Channel 30V 7.2A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
MOSFET, N CHANNEL, 30V, SOT1220; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
MOSFET N-CH 30V 7.2A DFN2020MD-6
MOSFET N-CH 30V 7.2A 6DFN
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMPB20EN,115 | 278-PMPB20EN,115 | 1089732-PMPB20EN,115 | 1727-PMPB20EN,115CT-ND | 43W6162 | PMPB20EN,115 | 554-PMPB20EN,115 |
| Product Name | 30 V, N-channel Trench MOSFET | N-Channel 30 V DFN MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMPB20EN,115 | Single FETs, MOSFETs | Mosfet, N Channel, 30V, Sot1220; Channel Type Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 30V 7.2A 6DFN |
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 10400 milliamps | 10400 milliamps | |||||
| VGS(off) | 20 volts | ||||||
| PD | 1.7 milliwatts | 1700 to 12500 milliwatts | 1700 milliwatts |
