N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-CH 40V 4.8A TO236AB Product overview: PMV30ENEAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 4.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 4.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV30ENEAR can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 890106-PMV30ENEAR
Series: Automotive, AEC-Q101
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 40 V 4.8A (Ta) 710mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
Package: TO-236-3, SC-59, SOT-23-3
Package: Reel - TR
Mounting: Surface Mount
Family Name: PMV30
Categories: Discrete Semiconductor Products
Case / Package: TO-236AB
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
HTSUS: 8541.29.0095
Other Part Number: 1727-8665-2, 934660593215, 1727-8665-1, 1727-8665-6
N-Channel 40V 4.8A (Ta) 710mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
N-Channel 40V 4.8A (Ta) 710mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
N-Channel 40V 4.8A (Ta) 710mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
MOSFET, N-CH, 40V, 4.8A, TO-236AB; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
MOSFET N-CH 40V 4.8A TO236AB
MOSFET N-CH 40V 4.8A TO236AB
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV30ENEAR | 278-PMV30ENEAR | 890106-PMV30ENEAR | 1727-PMV30ENEARTR-ND | 07AH4517 | PMV30ENEAR | PMV30ENEAR |
| Product Name | 40 V, N-channel Trench MOSFET | 40V 4.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV30ENEAR | Single FETs, MOSFETs | Mosfet, N-Ch, 40V, 4.8A, To-236Ab; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | ||||
| IDSS | 4800 milliamps | 4800 milliamps | 4800 milliamps | ||||
| VGS(off) | 20 volts | ||||||
| PD | 710 milliwatts | 1.3 milliwatts | 710 milliwatts |
