Nexperia B.V. N-channel LFPAK 40 V, 14 mOhm standard level MOSFET PSMN014-40YS,115

Description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package Applications DC-to-DC convertors Lithium-ion battery protection Load switching Motor control Server power supplies
Request a Quote Datasheet
Description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package Applications DC-to-DC convertors Lithium-ion battery protection Load switching Motor control Server power supplies
Request a Quote Datasheet

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Product
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Supplier Links
N-channel LFPAK 40 V, 14 mOhm standard level MOSFET - PSMN014-40YS,115 - Nexperia B.V.
Nijmegen, Netherlands
N-channel LFPAK 40 V, 14 mOhm standard level MOSFET
PSMN014-40YS,115
N-channel LFPAK 40 V, 14 mOhm standard level MOSFET PSMN014-40YS,115
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package Applications DC-to-DC convertors Lithium-ion battery protection Load switching Motor control Server power supplies

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Features and benefits

  • Advanced TrenchMOS provides low RDSon and low gate charge
  • High efficiency gains in switching power converters
  • Improved mechanical and thermal characteristics
  • LFPAK provides maximum power density in a Power SO8 package

Applications

  • DC-to-DC convertors
  • Lithium-ion battery protection
  • Load switching
  • Motor control
  • Server power supplies
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN014-40YS,115 - 1090325-PSMN014-40YS,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN014-40YS,115
1090325-PSMN014-40YS,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN014-40YS,115 1090325-PSMN014-40YS,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1090325-PSMN014-40YS ,115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 46A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 702pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1090325-PSMN014-40YS,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 56W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: LFPAK56, Power-SO8
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 46A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 702pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 1727-4624-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4624-6-ND
Single FETs, MOSFETs 1727-4624-6-ND
N-Channel 40V 46A (Tc) 56W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 40V 46A (Tc) 56W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-4624-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4624-1-ND
Single FETs, MOSFETs 1727-4624-1-ND
N-Channel 40V 46A (Tc) 56W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 40V 46A (Tc) 56W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-4624-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4624-2-ND
Single FETs, MOSFETs 1727-4624-2-ND
N-Channel 40V 46A (Tc) 56W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 40V 46A (Tc) 56W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Singapore, Singapore
N-Channel 40 V SOIC MOSFET Transistor
278-PSMN014-40YS,115
N-Channel 40 V SOIC MOSFET Transistor 278-PSMN014-40YS,115
PSMN014-40YS - N-channel LFPAK 40 V, 14 mΩ standard level MOSFET SOIC 4-Pin Product overview: PSMN014-40YS,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN014-40YS,115 can be used for catalog matching and distributor lookup.

PSMN014-40YS - N-channel LFPAK 40 V, 14 mΩ standard level MOSFET SOIC 4-Pin Product overview: PSMN014-40YS,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN014-40YS,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN014-40YS,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN014-40YS,115
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN014-40YS,115
MOSFET N-CH 40V 46A LFPAK56

MOSFET N-CH 40V 46A LFPAK56

Supplier's Site
Mosfet,n Channel,40V,46A,lfpak; Channel Type Nexperia - 13T9519 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Channel,40V,46A,lfpak; Channel Type Nexperia
13T9519
Mosfet,n Channel,40V,46A,lfpak; Channel Type Nexperia 13T9519
MOSFET,N CHANNEL,40V,46A,LFPA K; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:46A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:-RoHS Compliant: Yes

MOSFET,N CHANNEL,40V,46A,LFPAK; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:46A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:-RoHS Compliant: Yes

Supplier's Site
Single FETs, MOSFETs - PSMN014-40YS,115 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PSMN014-40YS,115
Single FETs, MOSFETs PSMN014-40YS,115
MOSFET N-CH 40V 46A LFPAK56

MOSFET N-CH 40V 46A LFPAK56

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PSMN014-40YS,115 1090325-PSMN014-40YS,115 1727-4624-6-ND 278-PSMN014-40YS,115 PSMN014-40YS,115 13T9519 PSMN014-40YS,115
Product Name N-channel LFPAK 40 V, 14 mOhm standard level MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN014-40YS,115 Single FETs, MOSFETs N-Channel 40 V SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet,n Channel,40V,46A,lfpak; Channel Type Nexperia Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
Package Type SOT669 SOT669 SOT3; LFPAK56, Power-SO8 SC-100, SOT-669 SC-100, SOT-669 TO-3 SC-100, SOT-669
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 40 volts 40 volts
PD 56000 milliwatts 56000 milliwatts
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