N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The device has a 30 V drain-source voltage rating, a drain-source on-state resistance of 44 mΩ at VGS = 10 V and ID = 3.2 A, and an exposed drain pad for thermal conduction. It supports a continuous drain current of 3.2 A at 25 °C and a peak drain current of 12.8 A. The package dimensions are 1.1 × 1.0 × 0.37 mm. The part offers 1 kV ESD protection and operates with a junction temperature range of -55 °C to 150 °C. It meets IEC 60134 for limiting values.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 30V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
N-Channel 30V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
N-Channel 30V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
PMXB65ENE - 30 V, N-channel Trench MOSFET DFN 3-Pin Product overview: PMXB65ENEZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMXB65ENEZ can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 3.2A DFN1010D-3
MOSFET Transistor, N Channel, 3.2 A, 30 V, 0.044 ohm, 10 V, 1.4 V RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMXB65ENEZ | 1727-PMXB65ENEZCT-ND | 278-PMXB65ENEZ | PMXB65ENEZ | 68Y7851 |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs | N-Channel 30 V DFN MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 3.2 A, 30 V, 0.044 Ohm, 10 V, 1.4 V Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 30 volts | ||||
| IDSS | 3200 milliamps | ||||
| VGS(off) | 20 volts | ||||
| PD | 0.4000 milliwatts |
