Nexperia B.V. 30 V, N-channel Trench MOSFET PMXB65ENEZ

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV Very low Drain-Source on-state resistance RDSon = 44 mΩ Applications Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters
  • 30 V, N-channel Trench MOSFET - PMXB65ENEZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMXB65ENEZDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMXB65ENEZCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMXB65ENEZTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMXB65ENEZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, N Channel, 3.2 A, 30 V, 0.044 Ohm, 10 V, 1.4 V Rohs Compliant Nexperia - 68Y7851 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV Very low Drain-Source on-state resistance RDSon = 44 mΩ Applications Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMXB65ENEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMXB65ENEZ
30 V, N-channel Trench MOSFET PMXB65ENEZ
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV Very low Drain-Source on-state resistance RDSon = 44 mΩ Applications Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
  • Exposed drain pad for excellent thermal conduction
  • ElectroStatic Discharge (ESD) protection 1 kV
  • Very low Drain-Source on-state resistance RDSon = 44 mΩ

Applications

  • Low-side load switch and charging switch for portable devices
  • Power management in battery-driven portables
  • LED driver
  • DC-to-DC converters
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
N-Channel 30 V DFN MOSFET Transistor
278-PMXB65ENEZ
N-Channel 30 V DFN MOSFET Transistor 278-PMXB65ENEZ
PMXB65ENE - 30 V, N-channel Trench MOSFET DFN 3-Pin Product overview: PMXB65ENEZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMXB65ENEZ can be used for catalog matching and distributor lookup.

PMXB65ENE - 30 V, N-channel Trench MOSFET DFN 3-Pin Product overview: PMXB65ENEZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMXB65ENEZ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMXB65ENEZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMXB65ENEZDKR-ND
Single FETs, MOSFETs 1727-PMXB65ENEZDKR-ND
N-Channel 30V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

N-Channel 30V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMXB65ENEZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMXB65ENEZCT-ND
Single FETs, MOSFETs 1727-PMXB65ENEZCT-ND
N-Channel 30V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

N-Channel 30V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMXB65ENEZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMXB65ENEZTR-ND
Single FETs, MOSFETs 1727-PMXB65ENEZTR-ND
N-Channel 30V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

N-Channel 30V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMXB65ENEZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMXB65ENEZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMXB65ENEZ
MOSFET N-CH 30V 3.2A DFN1010D-3

MOSFET N-CH 30V 3.2A DFN1010D-3

Supplier's Site
Mosfet Transistor, N Channel, 3.2 A, 30 V, 0.044 Ohm, 10 V, 1.4 V Rohs Compliant Nexperia - 68Y7851 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 3.2 A, 30 V, 0.044 Ohm, 10 V, 1.4 V Rohs Compliant Nexperia
68Y7851
Mosfet Transistor, N Channel, 3.2 A, 30 V, 0.044 Ohm, 10 V, 1.4 V Rohs Compliant Nexperia 68Y7851
MOSFET Transistor, N Channel, 3.2 A, 30 V, 0.044 ohm, 10 V, 1.4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 3.2 A, 30 V, 0.044 ohm, 10 V, 1.4 V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMXB65ENEZ 278-PMXB65ENEZ 1727-PMXB65ENEZDKR-ND PMXB65ENEZ 68Y7851
Product Name 30 V, N-channel Trench MOSFET N-Channel 30 V DFN MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 3.2 A, 30 V, 0.044 Ohm, 10 V, 1.4 V Rohs Compliant Nexperia
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 3200 milliamps
VGS(off) 20 volts
PD 0.4000 milliwatts
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