Nexperia B.V. 12 V, N-channel Trench MOSFET PMZB170VNEYL

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection typically > 2 kV Ultra thin package profile of 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 12 V, N-channel Trench MOSFET - PMZB170VNEYL - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMZB170VNEYLTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMZB170VNEYLCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMZB170VNEYLDKR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection typically > 2 kV Ultra thin package profile of 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits
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Suppliers

Company
Product
Description
Supplier Links
12 V, N-channel Trench MOSFET - PMZB170VNEYL - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
12 V, N-channel Trench MOSFET
PMZB170VNEYL
12 V, N-channel Trench MOSFET PMZB170VNEYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection typically > 2 kV Ultra thin package profile of 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Very low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection typically > 2 kV
  • Ultra thin package profile of 0.37 mm

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMZB170VNEYLTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMZB170VNEYLTR-ND
Single FETs, MOSFETs 1727-PMZB170VNEYLTR-ND
PMZB170VNE/SOT883B/X QFN3

PMZB170VNE/SOT883B/XQFN3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMZB170VNEYLCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMZB170VNEYLCT-ND
Single FETs, MOSFETs 1727-PMZB170VNEYLCT-ND
PMZB170VNE/SOT883B/X QFN3

PMZB170VNE/SOT883B/XQFN3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMZB170VNEYLDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMZB170VNEYLDKR-ND
Single FETs, MOSFETs 1727-PMZB170VNEYLDKR-ND
PMZB170VNE/SOT883B/X QFN3

PMZB170VNE/SOT883B/XQFN3

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMZB170VNEYL 1727-PMZB170VNEYLTR-ND
Product Name 12 V, N-channel Trench MOSFET Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 12 volts
IDSS 1500 milliamps
VGS(off) 6 volts
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