Nexperia B.V. 20 V, P-channel Trench MOSFET PMX400UPEZ

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package 0.63 x 0.33 x 0.25 mm Trench MOSFET technology Low profile (0.25 mm) ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side load switch Switching circuits
  • 20 V, P-channel Trench MOSFET - PMX400UPEZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMX400UPEZTR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package 0.63 x 0.33 x 0.25 mm Trench MOSFET technology Low profile (0.25 mm) ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - PMX400UPEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMX400UPEZ
20 V, P-channel Trench MOSFET PMX400UPEZ
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package 0.63 x 0.33 x 0.25 mm Trench MOSFET technology Low profile (0.25 mm) ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Leadless ultra small package 0.63 x 0.33 x 0.25 mm
  • Trench MOSFET technology
  • Low profile (0.25 mm)
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Battery switch
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMX400UPEZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMX400UPEZTR-ND
Single FETs, MOSFETs 1727-PMX400UPEZTR-ND
PMX400UPE/SOT8013/DF N0603-3

PMX400UPE/SOT8013/DFN0603-3

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMX400UPEZ 1727-PMX400UPEZTR-ND
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts
IDSS -900 milliamps
VGS(off) -0.7000 volts
Unlock Full Specs
to access all available technical data

Similar Products

60 V, 300 mA dual N-channel Trench MOSFET - 2N7002BKSH - Nexperia B.V.
Nexperia B.V.
60 V, 300 mA dual N-channel Trench MOSFET
2N7002BKSH
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
View Details
2 suppliers
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK6210-55C,118 - 1025143-BUK6210-55C,118 - Win Source Electronics
Nexperia B.V.
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK6210-55C,118
BUK6210-55C,118
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 55 volts
PD 128000 milliwatts
View Details
4 suppliers
40 V, N-channel Trench MOSFET - BUK6D30-40EX - Nexperia B.V.
Nexperia B.V.
40 V, N-channel Trench MOSFET
BUK6D30-40EX
Specs
MOSFET Operating Mode Enhancement
Package Type SOT1220
View Details
6 suppliers
N-channel 100 V, 65 mΩ standard level MOSFET in LFPAK56 - BUK7Y65-100E/A004X - Nexperia B.V.
Nexperia B.V.
N-channel 100 V, 65 mΩ standard level MOSFET in LFPAK56
BUK7Y65-100E/A004X
Specs
MOSFET Operating Mode Enhancement
Package Type SOT669
View Details