Nexperia B.V. 20 V, P-channel Trench MOSFET PMX400UPEZ

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. The package measures 0.63 mm x 0.33 mm x 0.25 mm with a 0.225 mm pitch. The device has a drain-source voltage rating of -20 V, a gate-source voltage range of -8 V to 8 V, and a continuous drain current of -900 mA at 25 °C with V_GS = -4.5 V. Drain-source on-state resistance is 425 mΩ to 500 mΩ at -4.5 V and -1 A. Total power dissipation is 300 mW at 25 °C. Electrostatic discharge protection exceeds 2 kV HBM. Junction temperature operates from -55 °C to 150 °C.