Nexperia B.V. 20 V, P-channel Trench MOSFET PMX400UPEZ

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package 0.63 x 0.33 x 0.25 mm Trench MOSFET technology Low profile (0.25 mm) ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side load switch Switching circuits
  • 20 V, P-channel Trench MOSFET - PMX400UPEZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMX400UPEZTR-ND - DigiKey
    DigiKey
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Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package 0.63 x 0.33 x 0.25 mm Trench MOSFET technology Low profile (0.25 mm) ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

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20 V, P-channel Trench MOSFET - PMX400UPEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMX400UPEZ
20 V, P-channel Trench MOSFET PMX400UPEZ
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package 0.63 x 0.33 x 0.25 mm Trench MOSFET technology Low profile (0.25 mm) ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Leadless ultra small package 0.63 x 0.33 x 0.25 mm
  • Trench MOSFET technology
  • Low profile (0.25 mm)
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Battery switch
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMX400UPEZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMX400UPEZTR-ND
Single FETs, MOSFETs 1727-PMX400UPEZTR-ND
PMX400UPE/SOT8013/DF N0603-3

PMX400UPE/SOT8013/DFN0603-3

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Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMX400UPEZ 1727-PMX400UPEZTR-ND
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts
IDSS -900 milliamps
VGS(off) -0.7000 volts
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