Nexperia B.V. 30 V, P-channel Trench MOSFET PMV50EPEAR

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, P-channel Trench MOSFET - PMV50EPEAR - Nexperia B.V.
Nijmegen, Netherlands
30 V, P-channel Trench MOSFET
PMV50EPEAR
30 V, P-channel Trench MOSFET PMV50EPEAR
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified Applications Relay driver High-speed line driver High-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic level compatible
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - PMV50EPEAR - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMV50EPEAR
Single FETs, MOSFETs PMV50EPEAR
MOSFET P-CH 30V 4.2A TO236AB

MOSFET P-CH 30V 4.2A TO236AB

Supplier's Site Datasheet
Singapore
30V 4.2A MOSFET Transistor
278-PMV50EPEAR
30V 4.2A MOSFET Transistor 278-PMV50EPEAR
MOSFET P-CH 30V 4.2A TO236AB Product overview: PMV50EPEAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV50EPEAR can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 4.2A TO236AB Product overview: PMV50EPEAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV50EPEAR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2727-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2727-6-ND
Single FETs, MOSFETs 1727-2727-6-ND
P-Channel 30V 4.2A (Ta) 310mW (Ta), 455mW (Tc) Surface Mount TO-236AB

P-Channel 30V 4.2A (Ta) 310mW (Ta), 455mW (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2727-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2727-1-ND
Single FETs, MOSFETs 1727-2727-1-ND
P-Channel 30V 4.2A (Ta) 310mW (Ta), 455mW (Tc) Surface Mount TO-236AB

P-Channel 30V 4.2A (Ta) 310mW (Ta), 455mW (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2727-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2727-2-ND
Single FETs, MOSFETs 1727-2727-2-ND
P-Channel 30V 4.2A (Ta) 310mW (Ta), 455mW (Tc) Surface Mount TO-236AB

P-Channel 30V 4.2A (Ta) 310mW (Ta), 455mW (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET PMV50EPEA/TO-236AB/R EEL 7" Q3/

MOSFET PMV50EPEA/TO-236AB/REEL 7" Q3/

Buy Now Datasheet
Mosfet, Aec-Q101, P-Ch, -30V, Sot-23-3; Transistor Polarity Nexperia - 65AC3940 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, P-Ch, -30V, Sot-23-3; Transistor Polarity Nexperia
65AC3940
Mosfet, Aec-Q101, P-Ch, -30V, Sot-23-3; Transistor Polarity Nexperia 65AC3940
MOSFET, AEC-Q101, P-CH, -30V, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power RoHS Compliant: Yes

MOSFET, AEC-Q101, P-CH, -30V, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMV50EPEAR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMV50EPEAR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMV50EPEAR
MOSFET P-CH 30V 4.2A TO236AB

MOSFET P-CH 30V 4.2A TO236AB

Supplier's Site

Technical Specifications

  Nexperia B.V. ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMV50EPEAR PMV50EPEAR 278-PMV50EPEAR 1727-2727-6-ND PMV50EPEAR 65AC3940 PMV50EPEAR
Product Name 30 V, P-channel Trench MOSFET Single FETs, MOSFETs 30V 4.2A MOSFET Transistor Single FETs, MOSFETs MOSFET Mosfet, Aec-Q101, P-Ch, -30V, Sot-23-3; Transistor Polarity Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS -30 volts 30 volts 30 volts
IDSS -4200 milliamps 4200 milliamps -4200 milliamps
VGS(off) -2 volts
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