N-channel enhancement mode MOSFET in an SOT23 surface-mounted plastic package measuring 2.9 mm × 1.3 mm × 1 mm, using Trench MOSFET technology. It features a drain-source voltage rating of 30 V, continuous drain current of 4.4 A at 25 °C, and a junction temperature range from -55 °C to 175 °C. The device has a drain-source on-state resistance of 28 to 37 mΩ at V<sub>GS</sub> = 10 V and I<sub>D</sub> = 4.4 A, and provides ESD protection exceeding 1.5 kV HBM (class H1C). Logic-level compatible with a gate-source threshold voltage of 1 to 2.5 V.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 30V 4.4A (Ta) 660mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
N-Channel 30V 4.4A (Ta) 660mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
N-Channel 30V 4.4A (Ta) 660mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
PMV28ENE/SOT23/TO-23
MOSFET, N-CH, 30V, 4.4A, SOT-23 ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV28ENER | 1727-PMV28ENERCT-ND | PMV28ENER | 26AK2759 |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 4.4A, Sot-23 Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 30 volts | |||
| IDSS | 4400 milliamps | |||
| VGS(off) | 20 volts | |||
| PD | 660 milliwatts |
