Nexperia B.V. 30 V, N-channel Trench MOSFET PMV28ENER

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1.5 kV HBM (class H1C) Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - PMV28ENER - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMV28ENERCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMV28ENERTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMV28ENERDKR-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 30V, 4.4A, Sot-23 Rohs Compliant Nexperia - 26AK2759 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMV28ENER - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1.5 kV HBM (class H1C) Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMV28ENER - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMV28ENER
30 V, N-channel Trench MOSFET PMV28ENER
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1.5 kV HBM (class H1C) Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Extended temperature range Tj = 175 °C
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 1.5 kV HBM (class H1C)

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMV28ENERCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV28ENERCT-ND
Single FETs, MOSFETs 1727-PMV28ENERCT-ND
N-Channel 30V 4.4A (Ta) 660mW (Ta), 8.3W (Tc) Surface Mount TO-236AB

N-Channel 30V 4.4A (Ta) 660mW (Ta), 8.3W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMV28ENERTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV28ENERTR-ND
Single FETs, MOSFETs 1727-PMV28ENERTR-ND
N-Channel 30V 4.4A (Ta) 660mW (Ta), 8.3W (Tc) Surface Mount TO-236AB

N-Channel 30V 4.4A (Ta) 660mW (Ta), 8.3W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMV28ENERDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV28ENERDKR-ND
Single FETs, MOSFETs 1727-PMV28ENERDKR-ND
N-Channel 30V 4.4A (Ta) 660mW (Ta), 8.3W (Tc) Surface Mount TO-236AB

N-Channel 30V 4.4A (Ta) 660mW (Ta), 8.3W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Mosfet, N-Ch, 30V, 4.4A, Sot-23 Rohs Compliant Nexperia - 26AK2759 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 4.4A, Sot-23 Rohs Compliant Nexperia
26AK2759
Mosfet, N-Ch, 30V, 4.4A, Sot-23 Rohs Compliant Nexperia 26AK2759
MOSFET, N-CH, 30V, 4.4A, SOT-23 ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 4.4A, SOT-23 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMV28ENER - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMV28ENER
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMV28ENER
PMV28ENE/SOT23/TO-23 6AB

PMV28ENE/SOT23/TO-236AB

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMV28ENER 1727-PMV28ENERCT-ND 26AK2759 PMV28ENER
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs Mosfet, N-Ch, 30V, 4.4A, Sot-23 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 4400 milliamps
VGS(off) 1.5 volts
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