Nexperia B.V. 12 V, P-channel Trench MOSFET PMZ220VPEYL

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package measuring 1.0 x 0.6 x 0.48 mm using Trench MOSFET technology. It has a drain-source voltage rating of -12 V, a continuous drain current of -1.2 A at -4.5 V gate-source bias, and a drain-source on-state resistance of 300 to 355 mΩ at -4.5 V gate-source bias and 25 °C junction temperature. ElectroStatic Discharge (ESD) protection is typically greater than 2 kV HBM. It operates with a junction temperature range of -55 °C to 150 °C and meets IEC 60134 for absolute maximum ratings.