N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 30V 4.1A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB
N-Channel 30V 4.1A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB
N-Channel 30V 4.1A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089794-PMV45EN2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.1A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.3nC @ 10V
Max Input Capacitance: 209pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 42 mOhm @ 4.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 4.1A TO236AB
MOSFET, N-CH, 30V, 5.1A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes
30V 4.1A 42mΩ@10V,4.1A 2V@250uA N Channel SOT-23 MOSFETs ROHS
MOSFET N-CH 30V 4.1A TO236AB
| Nexperia B.V. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMV45EN2R | 1727-2307-1-ND | 1089794-PMV45EN2R | PMV45EN2R | 44AC2810 | PMV45EN2R | PMV45EN2R |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV45EN2R | Single FETs, MOSFETs | Mosfet, N-Ch, 30V, 5.1A, Sot-23-3; Transistor Polarity Nexperia | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | |||
| IDSS | 5100 milliamps | 4100 milliamps | 5100 milliamps | ||||
| VGS(off) | 1.5 volts | 2 volts |
