Nexperia B.V. 30 V, N-channel Trench MOSFET PMV45EN2R

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipation capability of 1115 mW Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - PMV45EN2R - Nexperia B.V.
    Nexperia B.V.
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV45EN2R - 1089794-PMV45EN2R - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 1727-2307-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2307-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2307-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - PMV45EN2R - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMV45EN2R - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 30V, 5.1A, Sot-23-3; Transistor Polarity Nexperia - 44AC2810 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipation capability of 1115 mW Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMV45EN2R - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMV45EN2R
30 V, N-channel Trench MOSFET PMV45EN2R
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipation capability of 1115 mW Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic level compatible
  • Very fast switching
  • Trench MOSFET technology
  • Enhanced power dissipation capability of 1115 mW

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV45EN2R - 1089794-PMV45EN2R - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV45EN2R
1089794-PMV45EN2R
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV45EN2R 1089794-PMV45EN2R
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1089794-PMV45EN2R Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 510mW (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.1A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.3nC @ 10V Max Input Capacitance: 209pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 42 mOhm @ 4.1A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089794-PMV45EN2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.1A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.3nC @ 10V
Max Input Capacitance: 209pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 42 mOhm @ 4.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2307-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2307-1-ND
Single FETs, MOSFETs 1727-2307-1-ND
N-Channel 30V 4.1A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB

N-Channel 30V 4.1A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2307-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2307-2-ND
Single FETs, MOSFETs 1727-2307-2-ND
N-Channel 30V 4.1A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB

N-Channel 30V 4.1A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2307-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2307-6-ND
Single FETs, MOSFETs 1727-2307-6-ND
N-Channel 30V 4.1A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB

N-Channel 30V 4.1A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - PMV45EN2R - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMV45EN2R
Single FETs, MOSFETs PMV45EN2R
MOSFET N-CH 30V 4.1A TO236AB

MOSFET N-CH 30V 4.1A TO236AB

Supplier's Site Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
PMV45EN2R
Triode/MOS Tube/Transistor >> MOSFETs PMV45EN2R
30V 4.1A 42mΩ@10V,4.1A 2V@250uA N Channel SOT-23 MOSFETs ROHS

30V 4.1A 42mΩ@10V,4.1A 2V@250uA N Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMV45EN2R - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMV45EN2R
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMV45EN2R
MOSFET N-CH 30V 4.1A TO236AB

MOSFET N-CH 30V 4.1A TO236AB

Supplier's Site
Mosfet, N-Ch, 30V, 5.1A, Sot-23-3; Transistor Polarity Nexperia - 44AC2810 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 5.1A, Sot-23-3; Transistor Polarity Nexperia
44AC2810
Mosfet, N-Ch, 30V, 5.1A, Sot-23-3; Transistor Polarity Nexperia 44AC2810
MOSFET, N-CH, 30V, 5.1A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 5.1A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics DigiKey ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMV45EN2R 1089794-PMV45EN2R 1727-2307-1-ND PMV45EN2R PMV45EN2R PMV45EN2R 44AC2810
Product Name 30 V, N-channel Trench MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV45EN2R Single FETs, MOSFETs Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 30V, 5.1A, Sot-23-3; Transistor Polarity Nexperia
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts 30 volts 30 volts 30 volts
IDSS 5100 milliamps 4100 milliamps 5100 milliamps
VGS(off) 1.5 volts 2 volts
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