Nexperia B.V. 12 V, P-channel Trench MOSFET PMXB65UPEZ

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1.5 kV HBM Drain-source on-state resistance RDSon = 59 mΩ Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V Applications High-side load switch and charging switch for portable devices Power management in battery driven portables LED driver DC-to-DC converter
  • 12 V, P-channel Trench MOSFET - PMXB65UPEZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - PMXB65UPEZ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1085729-PMXB65UPEZ - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 1727-2177-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2177-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2177-2-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMXB65UPEZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1.5 kV HBM Drain-source on-state resistance RDSon = 59 mΩ Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V Applications High-side load switch and charging switch for portable devices Power management in battery driven portables LED driver DC-to-DC converter
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
12 V, P-channel Trench MOSFET - PMXB65UPEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
12 V, P-channel Trench MOSFET
PMXB65UPEZ
12 V, P-channel Trench MOSFET PMXB65UPEZ
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1.5 kV HBM Drain-source on-state resistance RDSon = 59 mΩ Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V Applications High-side load switch and charging switch for portable devices Power management in battery driven portables LED driver DC-to-DC converter

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
  • Exposed drain pad for excellent thermal conduction
  • ElectroStatic Discharge (ESD) protection 1.5 kV HBM
  • Drain-source on-state resistance RDSon = 59 mΩ
  • Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V

Applications

  • High-side load switch and charging switch for portable devices
  • Power management in battery driven portables
  • LED driver
  • DC-to-DC converter
Supplier's Site Datasheet
Single FETs, MOSFETs - PMXB65UPEZ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMXB65UPEZ
Single FETs, MOSFETs PMXB65UPEZ
MOSFET P-CH 12V 3.2A DFN1010D-3

MOSFET P-CH 12V 3.2A DFN1010D-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1085729-PMXB65UPEZ - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1085729-PMXB65UPEZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1085729-PMXB65UPEZ
Win Source Part Number: 1085729-PMXB65UPEZ Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 317mW (Ta), 8.33W (Tc) Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1010D-3 Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 6 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): CPH6337-TL-W; DMP1046UFDB-7; MCH6320-TL-W; SI1422DH-T1-GE3; CPH3348-TL-W; DMP1100UCB4-79340671 51147; ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Nexperia USA Inc. Other Names: 568-12342-1,568-1234 2-2,1727-2177-2,1727 -2177-1,568-12342-1- ND,1727-2177-6,568-1 2342-2-ND,PMXB65UPEZ -ND,934067151147,PMX B65UPE,147,568-12342 -6,568-12342-6-ND Base Product Number: PMXB65 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V

Win Source Part Number: 1085729-PMXB65UPEZ
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 6 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): CPH6337-TL-W; DMP1046UFDB-7; MCH6320-TL-W; SI1422DH-T1-GE3; CPH3348-TL-W; DMP1100UCB4-7934067151147;
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 568-12342-1,568-12342-2,1727-2177-2,1727-2177-1,568-12342-1-ND,1727-2177-6,568-12342-2-ND,PMXB65UPEZ-ND,934067151147,PMXB65UPE,147,568-12342-6,568-12342-6-ND
Base Product Number: PMXB65
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2177-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2177-6-ND
Single FETs, MOSFETs 1727-2177-6-ND
P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2177-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2177-1-ND
Single FETs, MOSFETs 1727-2177-1-ND
P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2177-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2177-2-ND
Single FETs, MOSFETs 1727-2177-2-ND
P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMXB65UPEZ
MOSFET PMXB65UPEZ
MOSFET 12V P-channel Trench MOSFET

MOSFET 12V P-channel Trench MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMXB65UPEZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMXB65UPEZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMXB65UPEZ
MOSFET P-CH 12V 3.2A DFN1010D-3

MOSFET P-CH 12V 3.2A DFN1010D-3

Supplier's Site

Technical Specifications

  Nexperia B.V. ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMXB65UPEZ PMXB65UPEZ 1085729-PMXB65UPEZ 1727-2177-6-ND PMXB65UPEZ PMXB65UPEZ
Product Name 12 V, P-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -12 volts 12 volts
IDSS -3200 milliamps 3200 milliamps
VGS(off) -0.6800 volts
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