P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET P-CH 12V 3.2A DFN1010D-3
P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
Win Source Part Number: 1085729-PMXB65UPEZ
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 6 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): CPH6337-TL-W; DMP1046UFDB-7; MCH6320-TL-W; SI1422DH-T1-GE3; CPH3348-TL-W; DMP1100UCB4-79340671
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 568-12342-1,568-1234
Base Product Number: PMXB65
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
MOSFET 12V P-channel Trench MOSFET
MOSFET P-CH 12V 3.2A DFN1010D-3
| Nexperia B.V. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMXB65UPEZ | PMXB65UPEZ | 1727-2177-6-ND | 1085729-PMXB65UPEZ | PMXB65UPEZ | PMXB65UPEZ |
| Product Name | 12 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | -12 volts | 12 volts | ||||
| IDSS | -3200 milliamps | 3200 milliamps | ||||
| VGS(off) | -0.6800 volts |