Nexperia B.V. 12 V, P-channel Trench MOSFET PMXB65UPEZ

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

• Trench MOSFET technology
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Exposed drain pad for excellent thermal conduction
• ElectroStatic Discharge (ESD) protection 1.5 kV HBM
• Drain-source on-state resistance R_DSon = 59 mΩ
• Very low gate-source threshold voltage for portable applications V_GS(th) = -0.68 V

Applications

• High-side load switch and charging switch for portable devices
• Power management in battery driven portables
• LED driver
• DC-to-DC converter

PMXB65UPE - 12 V, P-channel Trench MOSFET DFN 3-Pin Product overview: PMXB65UPEZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 12 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMXB65UPEZ can be used for catalog matching and distributor lookup.

P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

Win Source Part Number: 1085729-PMXB65UPEZ
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 6 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): CPH6337-TL-W; DMP1046UFDB-7; MCH6320-TL-W; SI1422DH-T1-GE3; CPH3348-TL-W; DMP1100UCB4-7934067151147;
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 568-12342-1,568-12342-2,1727-2177-2,1727-2177-1,568-12342-1-ND,1727-2177-6,568-12342-2-ND,PMXB65UPEZ-ND,934067151147,PMXB65UPE,147,568-12342-6,568-12342-6-ND
Base Product Number: PMXB65
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V

MOSFET P-CH 12V 3.2A DFN1010D-3