N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMZB200UNE - 30 V, N-channel Trench MOSFET DFN 3-Pin Product overview: PMZB200UNEYL from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMZB200UNEYL can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1324627-PMZB200UNEYL
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 10,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 1.4A
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW, 6.25W (Tc)
Supplier Device Package: DFN1006B-3
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 3-XFDFN
ECCN: EAR99
Fake Threat In the Open Market: 74
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 1727-2327-1,1727-232
Base Product Number: PMZB200
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
RoHS Status: ROHS3 Compliant
N-Channel 30V 1.4A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3
N-Channel 30V 1.4A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3
N-Channel 30V 1.4A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3
MOSFET N-CH 30V 1.4A DFN1006B-3
MOSFET Transistor, N Channel, 1.4 A, 30 V, 0.21 ohm, 4.5 V, 700 mV RoHS Compliant: Yes
MOSFET N-CH 30V 1.4A DFN1006B-3
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMZB200UNEYL | 278-PMZB200UNEYL | 1324627-PMZB200UNEYL | 1727-PMZB200UNEYLCT-ND | PMZB200UNEYL | 68Y7855 | PMZB200UNEYL |
| Product Name | 30 V, N-channel Trench MOSFET | N-Channel 30 V DFN MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 1.4 A, 30 V, 0.21 Ohm, 4.5 V, 700 Mv Rohs Compliant Nexperia | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| IDSS | 1400 milliamps | 1400 milliamps | |||||
| VGS(off) | 8 volts | ||||||
| PD | 350 milliwatts | 350 to 6250 milliwatts | 350 milliwatts |
