N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMV230ENEA - 60V, N-channel Trench MOSFET TO-236 3-Pin Product overview: PMV230ENEAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV230ENEAR can be used for catalog matching and distributor lookup.
N-Channel 60V 1.5A (Ta) 480mW (Ta), 1.45W (Tc) Surface Mount TO-236AB
N-Channel 60V 1.5A (Ta) 480mW (Ta), 1.45W (Tc) Surface Mount TO-236AB
N-Channel 60V 1.5A (Ta) 480mW (Ta), 1.45W (Tc) Surface Mount TO-236AB
Win Source Part Number: 964330-PMV230ENEAR
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 222mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 480mW (Ta), 1.45W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): CPH3351-TL-W; FDN5618P; DMN6140LQ-7; DMN6140L-13; FDN5630; DMP6350S-7;
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 568-12966-1,568-6296
Base Product Number: PMV230
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 60V 1.5A TO236AB
MOSFET, N- CH, 60V, 1.5A, TO-236AB; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.176ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET PMV230ENEA/TO-236AB/
MOSFET N-CH 60V 1.5A TO236AB
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV230ENEAR | 278-PMV230ENEAR | 1727-PMV230ENEARDKR-ND | 964330-PMV230ENEAR | PMV230ENEAR | 99Y2082 | PMV230ENEAR | PMV230ENEAR |
| Product Name | 30 V, N-channel Trench MOSFET | N-Channel 60V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, NCh, 60V, 1.5A, To-236Ab; Transistor Polarity Nexperia | MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 1500 milliamps | 1500 milliamps | 1500 milliamps | |||||
| VGS(off) | 20 volts | |||||||
| PD | 480 milliwatts | 480 to 1450 milliwatts | 480 milliwatts |
