The Nexperia PMP48EPA is a P-channel enhancement mode MOSFET designed for medium power applications. It operates with a maximum drain-source voltage of -30V and a continuous drain current of -4.7A. The device features a low on-state resistance of 40 to 50 mOc at a gate-source voltage of -10V, which contributes to efficient performance in switching applications. This MOSFET is housed in a compact DFN2020MD-6 (SOT1220) package, measuring 2 x 2 x 0.65 mm, making it suitable for space-constrained designs. It is AEC-Q101 qualified, indicating its reliability for automotive applications. The device also includes side wettable flanks for optical solder inspection, enhancing manufacturing quality control. Engineers may consider this MOSFET for applications such as relay drivers, high-speed line drivers, and high-side load switches, where its specifications align with project requirements.
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET P-CH 30V 4.7A DFN2020MD-6
P-Channel 30V 4.7A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
MOSFET P-CH 30V 4.7A DFN2020MD-6
Win Source Part Number: 1376903-PMPB48EPAX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 32 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel
Product Status: Active
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020MD-6
Base Product Number: PMPB48
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
PMPB48EPA - 30V, P-channel Trench MOSFET
MOSFET P-CH 30V 4.7A DFN2020MD-6
MOSFET P-CH 30V 4.7A DFN2020MD-6 Product overview: PMPB48EPAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB48EPAX can be used for catalog matching and distributor lookup.
MOSFET PMPB48EPA/SOT1220/SO
MOSFET, P-CH, -30V, -4.7A, SOT-1220; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power RoHS Compliant: Yes
MOSFET P-CH 30V 4.7A DFN2020MD-6
| Nexperia B.V. | DigiKey | Win Source Electronics | Rochester Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMPB48EPAX | 1727-PMPB48EPAXDKR-ND | 1376903-PMPB48EPAX | PMPB48EPAX | PMPB48EPAX | 278-PMPB48EPAX | PMPB48EPAX | 78AC6358 | PMPB48EPAX |
| Product Name | 30 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | 30V 4.7A MOSFET Transistor | MOSFET | Mosfet, P-Ch, -30V, -4.7A, Sot-1220; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| V(BR)DSS | -30 volts | 30 volts | 30 volts | ||||||
| IDSS | -4700 milliamps | 4700 milliamps | -4700 milliamps | ||||||
| VGS(off) | -1.5 volts |
