Nexperia B.V. 30 V, N-channel Trench MOSFET PMPB06R2ENX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Exposed drain pad for excellent thermal conduction Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Applications Intended for use in standard applications DC to DC conversion Battery management Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - PMPB06R2ENX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMPB06R2ENXTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB06R2ENXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB06R2ENXDKR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Exposed drain pad for excellent thermal conduction Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Applications Intended for use in standard applications DC to DC conversion Battery management Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMPB06R2ENX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMPB06R2ENX
30 V, N-channel Trench MOSFET PMPB06R2ENX
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Exposed drain pad for excellent thermal conduction Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Applications Intended for use in standard applications DC to DC conversion Battery management Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery
  • Low spiking and ringing for low EMI designs
  • Exposed drain pad for excellent thermal conduction
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

Applications

  • Intended for use in standard applications
  • DC to DC conversion
  • Battery management
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMPB06R2ENXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB06R2ENXTR-ND
Single FETs, MOSFETs 1727-PMPB06R2ENXTR-ND
PMPB06R2EN/SOT1220-2 /DFN2020M-

PMPB06R2EN/SOT1220-2/DFN2020M-

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB06R2ENXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB06R2ENXCT-ND
Single FETs, MOSFETs 1727-PMPB06R2ENXCT-ND
PMPB06R2EN/SOT1220-2 /DFN2020M-

PMPB06R2EN/SOT1220-2/DFN2020M-

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB06R2ENXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB06R2ENXDKR-ND
Single FETs, MOSFETs 1727-PMPB06R2ENXDKR-ND
PMPB06R2EN/SOT1220-2 /DFN2020M-

PMPB06R2EN/SOT1220-2/DFN2020M-

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMPB06R2ENX 1727-PMPB06R2ENXTR-ND
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 18000 milliamps
VGS(off) 20 volts
Unlock Full Specs
to access all available technical data