Nexperia B.V. 30 V, N-channel Trench MOSFET PMPB06R2ENX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Exposed drain pad for excellent thermal conduction Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Applications Intended for use in standard applications DC to DC conversion Battery management Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - PMPB06R2ENX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMPB06R2ENXTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB06R2ENXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB06R2ENXDKR-ND - DigiKey
    DigiKey
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Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Exposed drain pad for excellent thermal conduction Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Applications Intended for use in standard applications DC to DC conversion Battery management Low-side load switch Switching circuits
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Datasheet
Datasheet Summary
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N-channel enhancement mode MOSFET in a leadless DFN2020M-6 (SOT1220-2) surface-mounted package measuring 2 x 2 x 0.65 mm, designed for DC-DC conversion, battery management, and low-side switching. It features a 30 V drain-source voltage rating, a drain current of 18 A at 25 °C, and a maximum on-state resistance of 7.4 mΩ at 10 V gate-source voltage. The device has an exposed drain pad for enhanced thermal conduction, logic-level compatibility, and ultra-low gate charge for high efficiency. It meets IEC 60134 for limiting values and is suitable for high-frequency switching applications.

Datasheet Summary
Powered by GS/AI

N-channel enhancement mode MOSFET in a leadless DFN2020M-6 (SOT1220-2) surface-mounted package measuring 2 x 2 x 0.65 mm, designed for DC-DC conversion, battery management, and low-side switching. It features a 30 V drain-source voltage rating, a drain current of 18 A at 25 °C, and a maximum on-state resistance of 7.4 mΩ at 10 V gate-source voltage. The device has an exposed drain pad for enhanced thermal conduction, logic-level compatibility, and ultra-low gate charge for high efficiency. It meets IEC 60134 for limiting values and is suitable for high-frequency switching applications.

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMPB06R2ENX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMPB06R2ENX
30 V, N-channel Trench MOSFET PMPB06R2ENX
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Exposed drain pad for excellent thermal conduction Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Applications Intended for use in standard applications DC to DC conversion Battery management Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery
  • Low spiking and ringing for low EMI designs
  • Exposed drain pad for excellent thermal conduction
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

Applications

  • Intended for use in standard applications
  • DC to DC conversion
  • Battery management
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMPB06R2ENXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB06R2ENXTR-ND
Single FETs, MOSFETs 1727-PMPB06R2ENXTR-ND
PMPB06R2EN/SOT1220-2 /DFN2020M-

PMPB06R2EN/SOT1220-2/DFN2020M-

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB06R2ENXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB06R2ENXCT-ND
Single FETs, MOSFETs 1727-PMPB06R2ENXCT-ND
PMPB06R2EN/SOT1220-2 /DFN2020M-

PMPB06R2EN/SOT1220-2/DFN2020M-

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB06R2ENXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB06R2ENXDKR-ND
Single FETs, MOSFETs 1727-PMPB06R2ENXDKR-ND
PMPB06R2EN/SOT1220-2 /DFN2020M-

PMPB06R2EN/SOT1220-2/DFN2020M-

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMPB06R2ENX 1727-PMPB06R2ENXTR-ND
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 18000 milliamps
VGS(off) 20 volts
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