N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. It has a drain-source voltage rating of 30 V, a continuous drain current of 3.7 A at 25 °C ambient temperature on a standard footprint, and a maximum power dissipation of 490 mW. The drain-source on-state resistance is 36 to 44 mΩ at V_GS = 4.5 V and T_j = 25 °C. The gate-source threshold voltage ranges from 0.4 to 0.9 V. Thermal resistance from junction to ambient is 105 to 124 K/W on a standard footprint. The device is qualified for automotive applications and meets IEC 60134 for absolute maximum ratings.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 30V 3.7A (Ta) 490mW (Ta) Surface Mount TO-236AB
N-Channel 30V 3.7A (Ta) 490mW (Ta) Surface Mount TO-236AB
N-Channel 30V 3.7A (Ta) 490mW (Ta) Surface Mount TO-236AB
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089793-PMV40UN2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 490mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.7A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 12nC @ 4.5V
Max Input Capacitance: 635pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 44 mOhm @ 3.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
N-channel JFET, 30V, TO-236AB, 3-Pin Product overview: PMV40UN2R from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV40UN2R can be used for catalog matching and distributor lookup.
MOSFET 30V N-channel Trench MOSFET
MOSFET N-CH 30V 3.7A TO236AB
MOSFET Transistor, N Channel, 4.4 A, 30 V, 0.036 ohm, 4.5 V, 650 mV RoHS Compliant: Yes
30V 3.7A 490mW 44mΩ@4.5V,3.7A 900mV@250uA N Channel SOT-23 MOSFETs ROHS
| Nexperia B.V. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV40UN2R | 1727-PMV40UN2RCT-ND | 1089793-PMV40UN2R | 1364789 | 1364862P | 278-PMV40UN2R | PMV40UN2R | PMV40UN2R | 52Y7630 | PMV40UN2R |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV40UN2R | MOSFETs | MOSFETs | N-Channel 30V MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 4.4 A, 30 V, 0.036 Ohm, 4.5 V, 650 Mv Rohs Compliant Nexperia | Triode/MOS Tube/Transistor >> MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||||
| IDSS | 4400 milliamps | |||||||||
| VGS(off) | 12 volts | 0.9000 volts | ||||||||
| PD | 490 milliwatts | 490 milliwatts | 490 milliwatts |
