Nexperia B.V. Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 20 V, complementary Trench MOSFET -- PMCPB5530X,115 | Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Very fast switching Trench... |
| 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET -- PMGD290UCEAX | Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Very fast switching Trench MOSFET technology 2 kV... |
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20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET -- PMDT290UCE,115
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET -- PMDT290UCEH |
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Very fast switching Trench MOSFET... |
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20 V, dual N-channel Trench MOSFET -- PMDPB30XN,115
20 V, dual N-channel Trench MOSFET -- PMDPB30XNZ |
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Very fast switching Trench... |
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20 V, 800 mA dual N-channel Trench MOSFET -- PMDT290UNE,115
20 V, 800 mA dual N-channel Trench MOSFET -- PMDT290UNEYL |
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Very fast switching Trench MOSFET... |
| 20 V, dual P-channel Trench MOSFET -- PMDPB80XP,115 | Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features 1.8 V RDSon... |
| 20 V, dual P-channel Trench MOSFET -- PMDPB55XP,115 | Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Very fast switching Trench... |
| 20 V, 550 mA dual P-channel Trench MOSFET -- PMDT670UPE,115 | Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Very fast switching Trench MOSFET... |
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20 V dual P-channel Trench MOSFET -- PMDPB58UPE,115
20 V dual P-channel Trench MOSFET -- PMDPB85UPE,115 |
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Low threshold voltage Very fast... |
| 20 V dual P-channel Trench MOSFET -- PMDPB70XPE,115 | Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Very fast switching Trench MOSFET... |
| 20 V, dual N-channel Trench MOSFET -- PMDXB600UNELZ | Features Low leakage current Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection... |
| 20 V, N-channel Trench MOSFET -- PMZB600UNELYL | Features Low leakage current Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ Target applications Relay... |
| 20 V, N-channel Trench MOSFET -- PMZ600UNELYL | Features Low leakage current Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ Target applications Relay... |
| 20 V, dual P-channel Trench MOSFET -- PMDXB950UPELZ | Features Low leakage current Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic... |
| 20 V, complementary N/P-channel Trench MOSFET -- PMCXB900UELZ | Features Low leakage current Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.7 V Leadless ultra small and ultra thin SMD plastic package: 1.1 × |
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20 V, dual N-channel Trench MOSFET -- PMDXB600UNEZ
20 V, dual P-channel Trench MOSFET -- PMDXB950UPEZ |
Features Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection... |
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20 V, N-channel Trench MOSFET -- PMZ600UNEYL
20 V, N-channel Trench MOSFET -- PMZ600UNEZ |
Features Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon =... |
| 20 V, complementary N/P-channel Trench MOSFET -- PMCXB900UEZ | Features Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.7 V Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37... |
| 15 V, 0.5 A NPN low VCEsat (BISS) transistor -- PBSS2515M,315 | Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3515M. Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and... |
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15 V PNP BISS loadswitch -- PBLS1503Y,115
15 V PNP BISS loadswitch -- PBLS1504Y,115 |
Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low 'threshold' voltage (< 1 V) compared... |
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15 V PNP BISS loadswitch -- PBLS1501V,115
15 V PNP BISS loadswitch -- PBLS1501Y,115 15 V PNP BISS loadswitch -- PBLS1502Y,115 |
Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one package Low 'threshold' voltage (< 1 V)... |
| 15 V, 0.5 A PNP low VCEsat (BISS) transistor -- PBSS3515M,315 | Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package. NPN complement: PBSS2515M. Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and... |
| 20 V, Common Drain N-channel Trench MOSFET -- PMCM650CUNEZ | N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features Common-drain type for bi-directional current flow Low threshold... |
| 12V, N-channel Trench MOSFET -- PMCM4401VNEAZ | N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features Low threshold voltage Ultra small package: 0.78 × 0.78 × |
| 20 V, N-channel Trench MOSFET -- PMCM4401UNEZ | N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features Low threshold voltage Ultra small package: 0.78 x 0.78 x... |
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12 V, N-channel Trench MOSFET -- PMCM6501VNEZ
20 V, N-channel Trench MOSFET -- PMCM6501UNEZ |
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features Low threshold voltage Ultra small package: 0.98 × 1.48 × |
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20 V, N-channel Trench MOSFET -- PMPB10XNEAX
20 V, N-channel Trench MOSFET -- PMPB12UNEAX 20 V, N-channel Trench MOSFET -- PMPB23XNEAX |
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Low threshold voltage Trench MOSFET technology Side... |
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20 V, N-channel Trench MOSFET -- PMPB20XNEAX
20 V, N-channel Trench MOSFET -- PMPB20XNEAZ |
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Low threshold voltage Very fast switching Trench... |
| 20 V, N-channel Trench MOSFET -- PMPB12UNEX | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Low threshold voltage Exposed... |
| 20 V, N-channel Trench MOSFET -- PMH600UNEH | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Low threshold voltage Very fast switching Trench... |
| 20 V, N-channel Trench MOSFET -- PMZ290UNE2YL | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Low threshold voltage Very... |
| 20 V, N-channel Trench MOSFET -- PMZ130UNEYL | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Very fast switching Low threshold voltage Trench... |
| 20 V, N-channel Trench MOSFET -- PMZB600UNEYL | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Leadless ultra small SMD... |
| 20 V, N-channel Trench MOSFET -- PMZB290UNE2YL | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Low threshold voltage Very... |
| 20 V, N-channel Trench MOSFET -- PMZB150UNEYL | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Very fast switching Low threshold voltage Trench... |
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12 V, N-channel Trench MOSFET -- PMXB40UNEZ
20 V, N-channel Trench MOSFET -- PMXB43UNEZ |
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Leadless ultra small and... |
| 100 V, N-channel Trench MOSFET -- BUK6D385-100EX | N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Extended temperature range Tj = 175 °C... |
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100 V N-channel Trench MOSFET -- PMT280ENEAX
100 V N-channel Trench MOSFET -- PMT560ENEAX |
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Logic level compatible Very fast switching Trench MOSFET... |
| 100 V, N-channel Trench MOSFET -- PMV280ENEAR | N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Logic-level compatible Extended temperature range Tj = 175... |
| 20 V, N-channel Trench MOSFET -- PMV15UNEAR | N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Low threshold voltage Extended temperature range Tj =... |
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20 V, N-channel Trench MOSFET -- PMV20XNEAR
20 V, N-channel Trench MOSFET -- PMV28UNEAR |
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Low threshold voltage Very fast switching Trench MOSFET technology... |
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20 V, N-channel Trench MOSFET -- PMV65UNEAR
20 V, N-channel Trench MOSFET -- PMV65UNER |
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Low threshold voltage Enhanced power dissipation... |
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20 V, N-channel Trench MOSFET -- PMV16XNR
20 V, N-channel Trench MOSFET -- PMV30UN2R 20 V, N-channel Trench MOSFET -- PMV30UN2VL |
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Low threshold voltage Very fast switching... |
| 100 V, N-channel Trench MOSFET -- PMN280ENEAX | N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Logic-level compatible Extended temperature range Tj = 175... |
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20 V, N-channel Trench MOSFET -- PMN16XNEX
20 V, N-channel Trench MOSFET -- PMN28UNEX 20 V, N-channel Trench MOSFET -- PMN30UNEX |
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Low threshold voltage Very fast switching... |
| 20 V, N-channel Trench MOSFET -- PMF63UNEX | N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Low threshold voltage ElectroStatic Discharge... |
| 150 V, 1 A PNP high-voltage low VCEsat BISS transistor -- PBHV9115TLHR | NPN complement: PBHV8115TLH Features High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Small SMD plastic package AEC-Q101 qualified Target applications Power... |
| 100 V, 3 A NPN high power bipolar transistor -- MJD31CJ | NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C Features High thermal power dissipation capability High energy efficiency due to... |
| 100 V, 3 A NPN high power bipolar transistor -- MJD31CAJ | NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA Features High thermal power dissipation capability High energy efficiency due to... |
| 100V, 2 A NPN high power bipolar transistor -- PHPT61002NYCX | NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features High thermal power dissipation capability High temperature applications up to 175... |
| 100 V, 2 A NPN high power bipolar transistor -- PHPT61002NYCLHX | NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYCLH Features High thermal power dissipation capability High temperature applications up to 175... |
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100 V, 3 A NPN high power bipolar transistor -- PHPT61003NYX
100 V, 3A PNP high power bipolar transistor -- PHPT61003PYX |
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY Features High thermal power dissipation capability Suitable for high temperature applications up... |
| 100 V, 6 A NPN high power bipolar transistor -- PHPT61006NYX | NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY Features High thermal power dissipation capability High temperature applications up to 175 °C Reduced... |
| 100 V, 10 A NPN high power bipolar transistor -- PHPT61010NYX | NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY Features High thermal power dissipation capability High temperature applications up to 175 °C Reduced... |
| 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor -- PBHV8515QAZ | NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP... |
| 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor -- PBHV8115Z,115 | NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115Z. Features High voltage Low collector-emitter... |
| 150 V, 2 A NPN high-voltage low VCEsat (BISS) transistor -- PBHV8215Z,115 | NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9215Z. Features High voltage Low collector-emitter... |
| 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor -- PBHV8115T,215 | NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T. Features High voltage Low collector-emitter saturation... |
| 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor -- PBHV8118T,215 | NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features High voltage Low collector-emitter saturation voltage VCEsat... |
| 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor -- PBHV8115X,115 | NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115X. Features High... |
| 20 V, 5 A NPN low VCEsat (BISS) transistor -- PBSS4520X,135 | NPN low VCEsat BISS transistor in a SOT89 (SC-62) plastic package. PNP complement: PBSS5520X. Features High hFE and low VCEsat at high current operation High collector current... |
| 15 V, 0.5 A NPN low VCEsat (BISS) transistor -- PBSS2515MB,315 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515MB. Features Leadless ultra small SMD... |
| 20 V, 7 A NPN low VCEsat (BISS) transistor -- PBSS4021NX,115 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PX. Features Very low... |
| 20 V, 3 A NPN low VCEsat (BISS) transistor -- 2PD2150,115 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB1424. Features Low collector-emitter saturation... |
| 20 V, 4 A NPN low VCEsat (BISS) transistor -- PBSS4420D,115 | NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5420D. Features Very low collector-emitter saturation resistance Ultra... |
| 20 V, 8 A NPN low VCEsat (BISS) transistor -- PBSS4021NZ,115 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PZ. Features Very low collector-emitter saturation voltage... |
| 12 V, 5.8 A NPN low VCEsat (BISS) transistor -- PBSS301NZ,135 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS301PZ. Features Low collector-emitter saturation voltage VCEsat... |
| 100 V, 5.1 A NPN low VCEsat (BISS) transistor -- PBSS306NZ,135 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PZ. Features Low collector-emitter saturation voltage VCEsat... |
| 100 V, 1 A NPN low VCesat (BISS) transistor -- PBSS8110Z,135 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS9110Z. Features Low collector-emitter saturation voltage VCEsat... |
| 20 V, 4.3 A NPN low VCEsat (BISS) transistor -- PBSS4021NT,215 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PT. Features Very low collector-emitter saturation voltage V... |
| 100 V, 3 A NPN low VCEsat (BISS) transistor -- PBSS305ND,115 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS305PD. Features Low collector-emitter saturation voltage VCEsat... |
| 20 V, 4 A NPN low VCEsat (BISS) transistor -- PBSS301ND,115 | NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS301PD. Features Very low collector-emitter saturation resistance Ultra low... |
| 20 V, 2 A NPN low VCEsat (BISS) transistor -- PBSS4220V,115 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5220V. Features Low collector-emitter saturation voltage VCEsat High... |
| 100 V, 1 A NPN low VCEsat (BISS) transistor -- PBSS8110X,135 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X. Features SOT89 package Low collector-emitter saturation voltage VCEsat... |
| 12 V, 5.3 A NPN low VCEsat (BISS) transistor -- PBSS301NX,115 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS301PX. Features Low collector-emitter saturation... |
| 20 V, 5.3 A NPN low VCEsat (BISS) transistor -- PBSS302NX,115 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PX. Features Low collector-emitter saturation... |
| 100 V, 4.5 A NPN low VCEsat (BISS) transistor -- PBSS306NX,115 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PX. Features Low collector-emitter saturation... |
| 20 V, 6 A NPN low V_CEsat (BISS) transistor -- PBSS4620PA,115 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5620PA. |
| 12 V, 6 A NPN low V_CEsat (BISS) transistor -- PBSS4612PA,115 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5612PA. |
| 100 V, 5.2 A NPN low V_CEsat (BISS) transistor -- PBSS8510PA,115 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS9410PA. |
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15 V low VCEsat NPN double transistor -- PBSS2515VS,115
15 V low VCEsat NPN double transistor -- PBSS2515VS,315 |
NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. Features 300 mW total power dissipation Very small 1.6 x 1.2 mm ultra thin package Excellent... |
| 20 V, 3 A NPN low VCEsat (BISS) transistor -- PBSS4320X,135 | NPN low VCEsat transistor in a medium power flat lead SOT89 plastic package. PNP complement: PBSS5320X Features SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current... |
| 100 V, 1 A NPN low VCEsat (BISS) transistor -- PBSS8110D,115 | NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High... |
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20 V NPN low VCEsat transistor -- PBSS4320T,215
20 V NPN low VCEsat transistor -- PBSS4320TVL |
NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5320T. Features Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat High collector current capability High... |
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100 V, 1 A NPN low VCEsat (BISS) transistor -- PBSS8110T,215
100 V, 1 A NPN low VCEsat (BISS) transistor -- PBSS8110TVL |
NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS9110T. Features SOT23 package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and I... |
| 100 V, 1 A NPN low VCEsat (BISS) transistor -- PBSS8110Y,115 | NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High... |
| 20 V, 5.8 A NPN low VCEsat (BISS) transistor -- PBSS302NZ,135 | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ. Features Low collector-emitter saturation voltage VCEsat High collector... |
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20 V, 2 A NPN medium power transistor -- BC68-25PA,115
20 V, 2 A NPN medium power transistor -- BC68PA,115 |
NPN medium power transistor in a SOT1061 leadless very small Surface-Mounted Device (SMD) plastic package. PNP complement: BC69PA. Features High current Two current gain selections High power dissipation capability Exposed... |
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20 V, 2 A NPN medium power transistor -- BCP68,115
20 V, 2 A NPN medium power transistor -- BCP68-25,115 20 V, 2 A NPN medium power transistor -- BCP68-25,135 20 V, 2 A NPN medium power transistor -- BCP68F |
NPN medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BCP69. Features High current Two current gain selections High power dissipation capability AEC-Q101 qualified Target applications... |
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20 V, 2 A NPN medium power transistor -- BC868,115
20 V, 2 A NPN medium power transistor -- BC868-25,115 |
NPN medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: BC869. Features High current Two current gain selections High power dissipation capability Exposed heatsink for excellent... |
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20 V, 2 A NPN medium power transistors -- BC68-25PASX
20 V, 2 A NPN medium power transistors -- BC68PASX |
NPN medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. PNP complement: BC69PAS... |
| 20 V, 2 A NPN/NPN low VCEsat BISS double transistor -- PBSS4220PANSX | NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP/PNP... |
| 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor -- PBSS4112PAN,115 | NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP. Features Very... |
| 20 V, 7.5 A NPN/NPN low V_CEsat (BISS) transistor -- PBSS4021SN,115 | NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4021SPN Features Very low collector-emitter saturation voltage... |
| 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor -- PBSS4112PANP,115 | NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP. Features Very... |
| 20 V NPN/PNP low V_CEsat (BISS) transistor -- PBSS4021SPN,115 | NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Features Very low collector-emitter saturation voltage VCEsat High... |
| 15 V low VCEsat NPN/PNP transistor -- PBSS2515YPN,115 | NPN/PNP low VCEsat transistor pair in a SC-88 plastic package. Features Low collector-emitter saturation voltage High current capability Replaces two SC-70 packaged low VCEsat transistors on same PCB... |
| 15 V low VCEsat NPN/PNP transistor -- PBSS2515VPN,115 | NPN/PNP low VCEsat transistor pair in a SOT666 plastic package. Features 300 mW total power dissipation Very small 1.6 x 1.2 mm ultra thin package Excellent coplanarity due to... |
| 20 V, P-channel Trench MOSFET -- PMCM4402UPEZ | P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features Low threshold voltage Ultra small package 0.78 x 0.78 x... |
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12 V, P-channel Trench MOSFET -- PMCM4401VPEZ
20 V, P-channel Trench MOSFET -- PMCM4401UPEZ |
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features Low threshold voltage Ultra small package: 0.78 × 0.78 × |
| 12 V, P-channel Trench MOSFET -- PMCM6501VPEZ | P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features Low threshold voltage Ultra small package: 0.98 × 1.48 × |
| 20 V, P-channel Trench MOSFET -- PMCM6501UPEZ | P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features Low threshold voltage Ultra small package: 0.98 x 1.48 x... |
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12 V, single P-channel Trench MOSFET -- PMPB15XP,115
12 V, single P-channel Trench MOSFET -- PMPB15XPH 12 V, single P-channel Trench MOSFET -- PMPB15XPZ |
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features 1.5 kV ESD protection (human body model)... |
| 20 V, P-channel Trench MOSFET -- PMPB30XPEX | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Extended temperature range Tj = 175... |
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12 V, P-channel Trench MOSFET -- PMPB13UPX
12 V, P-channel Trench MOSFET -- PMPB14XPX 12 V, P-channel Trench MOSFET -- PMPB15XPAX 20 V, P-channel Trench MOSFET -- PMPB20XPEAX 20 V, P-channel Trench MOSFET -- PMPB29XPEAX 20 V, P-channel Trench MOSFET -- PMPB43XPEAX |
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Low threshold voltage Trench MOSFET technology Side... |
| 20 V, P-channel Trench MOSFET -- PMH950UPEH | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Low threshold voltage Very fast switching Trench... |
| 20 V, P-channel Trench MOSFET -- PMZ350UPEYL | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Low threshold voltage Very... |
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12 V, P-channel Trench MOSFET -- PMXB65UPEZ
20 V, P-channel Trench MOSFET -- PMXB350UPEZ 20 V, P-channel Trench MOSFET -- PMXB75UPEZ |
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Leadless ultra small and... |
| 20 V, 4 A P-channel Trench MOSFET -- PMV32UP,215 | P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features 1.8 V drain-source on-state resistance rated Very fast switching... |
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20 V, 2 A P-channel Trench MOSFET -- NX2301P,215
20 V, 2 A P-channel Trench MOSFET -- NX2301PVL |
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features 1.8 V RDSon rated for Low Voltage Gate... |
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20 V, 3.5 A P-channel Trench MOSFET -- PMV48XP,215
20 V, 3.5 A P-channel Trench MOSFET -- PMV48XPVL |
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Logic-level compatible Trench MOSFET technology Very fast switching Target... |
| 20 V, P-channel Trench MOSFET -- PMV48XPAR | P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Logic-level compatible Trench MOSFET technology Very fast switching AEC-Q101... |
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20 V, P-channel Trench MOSFET -- BSH205G2R
20 V, P-channel Trench MOSFET -- BSH205G2VL 20 V, P-channel Trench MOSFET -- PMV50XPR |
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Low threshold voltage Low on-state resistance Trench MOSFET technology... |
| 20 V, P-channel Trench MOSFET -- PMV100XPEAR | P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Low threshold voltage Very fast switching Trench MOSFET technology... |
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20 V, P-channel Trench MOSFET -- PMV27UPEAR
20 V, P-channel Trench MOSFET -- PMV27UPER 20 V, P-channel Trench MOSFET -- PMV75UP,215 |
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Low threshold voltage Very fast switching... |
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20 V, P-channel Trench MOSFET -- PMV30XPEAR
20 V, P-channel Trench MOSFET -- PMV65XPEAR 20 V, P-channel Trench MOSFET -- PMV65XPER |
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Very fast switching Enhanced power dissipation... |
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20 V, P-channel Trench MOSFET -- PMN42XPEAH
20 V, P-channel Trench MOSFET -- PMN42XPEAX |
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Fast switching Trench MOSFET technology 2 kV ESD protection... |
| 20 V, P-channel Trench MOSFET -- PMN48XPAX | P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Logic-level compatible Trench MOSFET technology Very fast switching AEC-Q101... |
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20 V, 4.1 A P-channel Trench MOSFET -- PMN48XP,115
20 V, 4.1 A P-channel Trench MOSFET -- PMN48XP,125 |
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Low RDSon Very fast switching Trench MOSFET technology... |
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20 V, P-channel Trench MOSFET -- PMN30XPX
20 V, P-channel Trench MOSFET -- PMN52XPX |
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Low threshold voltage Enhanced power dissipation... |
| 20 V, P-channel Trench MOSFET -- PMN70XPX | P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Trench MOSFET technology Low threshold voltage Very fast switching... |
| 20 V, P-channel Trench MOSFET -- PMN30XPEX | P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD)... |
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20 V, 1.2 A P-channel Trench MOSFET -- PMV160UP,215
20 V, 1.2 A P-channel Trench MOSFET -- PMV160UPVL |
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features 1.8 V RDSon rated Very fast switching Trench... |
| 20 V, 1 A P-channel Trench MOSFET -- PMF170XP,115 | P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Low RDSon Very fast switching Trench MOSFET technology... |
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20 V, 2 A P-channel Trench MOSFET -- PMG85XP,115
20 V, 2 A P-channel Trench MOSFET -- PMG85XPH |
P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features Low threshold voltage Very fast switching Trench MOSFET... |
| 150 V, 1 A NPN high-voltage low VCEsat BISS transistor -- PBHV8115TLHR | PNP complement: PBHV9115TLH Features High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Small SMD plastic package AEC-Q101 qualified Target applications Power... |
| 100 V, 3 A PNP high power bipolar transistor -- MJD32CJ | PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C Features High thermal power dissipation capability High energy efficiency due to... |
| 100 V, 3 A PNP high power bipolar transistor -- MJD32CAJ | PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA Features High thermal power dissipation capability High energy efficiency due to... |
| 100 V, 2 A PNP high power bipolar transistor -- PHPT61002PYCX | PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC. Features High thermal power dissipation capability Suitable for high temperature applications up... |
| 100 V, 2 A PNP high power bipolar transistor -- PHPT61002PYCLHX | PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYCLH. Features High thermal power dissipation capability Suitable for high temperature applications up... |
| 100 V, 10 A PNP high power bipolar transistor -- PHPT61010PYX | PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY. Features High thermal power dissipation capability Suitable for high temperature applications up... |
| 100 V, 6 A PNP high power bipolar transistor -- PHPT61006PYX | PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY Features High thermal power dissipation capability High temperature applications up to 175 °C Reduced... |
| 150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor -- PBHV9515QAZ | PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN... |
| 140 V, 4 A PNP high-voltage low VCEsat (BISS) transistor -- PBHV9414ZX | PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features High voltage Low collector-emitter saturation voltage V... |
| 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor -- PBHV9115Z,115 | PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115Z. Features High voltage Low collector-emitter... |
| 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor -- PBHV9215Z,115 | PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8215Z. Features High voltage Low collector-emitter saturation... |
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150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor -- PBHV9115T,215
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor -- PBHV9115TVL |
PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T. Features High voltage Low collector-emitter saturation voltage... |
| 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor -- PBHV9115X,115 | PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package. Features High voltage Low collector-emitter saturation voltage V... |
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20 V PNP BISS loadswitch -- PBLS2001D,115
20 V PNP BISS loadswitch -- PBLS2002D,115 20 V PNP BISS loadswitch -- PBLS2003D,115 20 V PNP BISS loadswitch -- PBLS2004D,115 |
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. Features Low V... |
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20 V, 1.8 A PNP BISS loadswitch -- PBLS2021D,115
20 V, 1.8 A PNP BISS loadswitch -- PBLS2022D,115 20 V, 1.8 A PNP BISS loadswitch -- PBLS2023D,115 20 V, 1.8 A PNP BISS loadswitch -- PBLS2024D,115 |
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Features Low VCEsat... |
| 15 V, 0.5 A PNP low VCEsat (BISS) transistor -- PBSS3515MB,315 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2515MB. Features Leadless ultra small SMD plastic... |
| 20 V, 6.2 A PNP low V_CEsat (BISS) transistor -- PBSS4021PX,115 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NX. Features Very low... |
| 20 V, 3 A PNP low VCEsat (BISS) transistor -- 2PB1424,115 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: 2PD2150. Features Low collector-emitter saturation... |
| 20 V, 4 A PNP low VCEsat (BISS) transistor -- PBSS5420D,115 | PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4420D. Features Very low collector-emitter saturation resistance Ultra... |
| 20 V, 6.6 A PNP low VCEsat (BISS) transistor -- PBSS4021PZ,115 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NZ. Features Very low collector-emitter saturation voltage... |
| 20 V, 5.5 A PNP low VCEsat (BISS) transistor -- PBSS302PZ,135 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NZ. Features Low collector-emitter saturation voltage VCEsat... |
| 100 V, 4.1 A PNP low VCEsat (BISS) transistor -- PBSS306PZ,135 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ. Features Low collector-emitter saturation voltage VCEsat... |
| 12 V, 5.7 A PNP low VCEsat (BISS) transistor -- PBSS301PZ,135 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS301NZ. Features Low collector-emitter saturation voltage VCEsat... |
| 100 V, 1 A PNP low VCEsat (BISS) transistor -- PBSS9110Z,135 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110Z. Features Low collector-emitter saturation voltage VCEsat... |
| 20 V, 3.5 A PNP low V CEsat (BISS) transistor -- PBSS4021PT,215 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NT. Features Very low collector-emitter saturation voltage V... |
| 20 V, 2 A PNP low VCEsat (BISS) transistor -- PBSS5220T,215 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. Features Low collector-emitter saturation voltage VCEsat High collector current capability:... |
| 100 V, 1 A PNP low VCEsat (BISS) transistor -- PBSS9110D,115 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110D. Features Low collector-emitter saturation voltage VCEsat... |
| 20 V, 4 A PNP low VCEsat (BISS) transistor -- PBSS301PD,115 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS301ND. Features Very low collector-emitter saturation resistance Ultra low... |
| 12 V, 5.3 A PNP low VCEsat (BISS) transistor -- PBSS301PX,115 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS301NX. Features Low collector-emitter saturation... |
| 100 V, 3.7 A PNP low V_CEsat (BISS) transistor -- PBSS306PX,115 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NX. Features Low collector-emitter saturation... |
| 12 V, 6 A PNP low VCEsat (BISS) transistor -- PBSS5612PA,115 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4612PA. |
| 20 V, 6 A PNP low VCEsat (BISS) transistor -- PBSS5620PA,115 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4620PA. |
| 100 V, 2.7 A PNP low VCEsat (BISS) transistor -- PBSS9410PA,115 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS8510PA. |
| 15 V low VCEsat PNP double transistor -- PBSS3515VS,115 | PNP low VCEsat double transistor in a SOT666 plastic package. NPN complement: PBSS2515VS. Features 300 mW total power dissipation Very small 1.6 x 1.2 mm ultra thin package Self... |
| 20 V, 3 A PNP low VCEsat (BISS) transistor -- PBSS5320X,135 | PNP low VCEsat transistor in a medium power flat lead SOT89 plastic package. NPN complement: PBSS4320X Features SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current... |
| 20 V, 3 A PNP low VCEsat (BISS) transistor -- PBSS5320T,215 | PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4320T. Features Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat High collector current capability High... |
| 100 V, 1 A PNP low VCEsat (BISS) transistor -- PBSS9110T,215 | PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS8110T. Features SOT23 package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and I... |
| 100 V, 1 A PNP low VCEsat (BISS) transistor -- PBSS9110Y,115 | PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High... |
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20 V low VCEsat PNP transistor -- PBSS5320D,115
20 V low VCEsat PNP transistor -- PBSS5320D,125 |
PNP low VCEsat transistor in a SOT457 (SC-74) plastic package. Features Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation AEC-Q101 qualified Target... |
| 20 V, 5 A PNP low VCEsat (BISS) transistor -- PBSS5520X,135 | PNP low VCEsat(BISS) transistor in a SOT89 (SC-62) plastic package. NPN complement: PBSS4520X. Features High hFE and low VCEsat at high current operation High collector current... |
| 100 V, 2 A PNP low V_CEsat (BISS) transistor -- PBSS305PD,115 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305ND. Features Low collector-emitter saturation voltage VCEsat High collector... |
| 20 V, 2 A PNP low V_CEsat (BISS) transistor -- PBSS5220V,115 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4220V. Features Low collector-emitter saturation voltage VCEsat High collector... |
| 100 V, 1 A PNP low VCEsat (BISS) transistor -- PBSS9110X,135 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement: PBSS8110X. Features SOT89 package Low collector-emitter saturation voltage VCEsat High... |
| 20 V, 5.1 A PNP low VCEsat (BISS) transistor -- PBSS302PX,115 | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NX. Features Low collector-emitter saturation voltage... |
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20 V, 2 A PNP medium power transistor -- BC69-16PA,115
20 V, 2 A PNP medium power transistor -- BC69-25PA,115 20 V, 2 A PNP medium power transistor -- BC69PA,115 |
PNP medium power transistor in a SOT1061 leadless very small Surface-Mounted Device (SMD) plastic package. NPN complement: BC68PA. Features High current Three current gain selections High power dissipation capability Exposed... |
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20 V, 2 A PNP medium power transistor -- BCP69,115
20 V, 2 A PNP medium power transistor -- BCP69,135 20 V, 2 A PNP medium power transistor -- BCP69-16,115 20 V, 2 A PNP medium power transistor -- BCP69-16F 20 V, 2 A PNP medium power transistor -- BCP69-25,115 20 V, 2 A PNP medium power transistor -- BCP69-25,135 |
PNP medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BCP68. Features High current Three current gain selections High power dissipation capability AEC-Q101 qualified Target applications... |
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20 V, 2 A PNP medium power transistor -- BC869,115
20 V, 2 A PNP medium power transistor -- BC869,135 20 V, 2 A PNP medium power transistor -- BC869-16,115 20 V, 2 A PNP medium power transistor -- BC869-25,115 |
PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BC868. Features High current Three current gain selections High power dissipation capability Exposed heatsink for excellent... |
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20 V, 2 A PNP medium power transistors -- BC69-16PASX
20 V, 2 A PNP medium power transistors -- BC69-25PASX 20 V, 2 A PNP medium power transistors -- BC69PASX |
PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. NPN complement: BC68PAS... |
| 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor -- PBSS5112PAP,115 | PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN. Features Very... |
| 20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor -- PBSS4021SP,115 | PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Features Low collector-emitter saturation voltage VCEsat High collector... |
| 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination -- PMFPB8032XP,115 | Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra... |
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