P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMV50XP - 20 V, P-channel Trench MOSFET TO-236 3-Pin Product overview: PMV50XPR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV50XPR can be used for catalog matching and distributor lookup.
P-Channel 20V 3.6A (Ta) 490mW (Ta), 4.63W (Tc) Surface Mount TO-236AB
P-Channel 20V 3.6A (Ta) 490mW (Ta), 4.63W (Tc) Surface Mount TO-236AB
P-Channel 20V 3.6A (Ta) 490mW (Ta), 4.63W (Tc) Surface Mount TO-236AB
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089800-PMV50XPR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 490mW (Ta), 4.63W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.6A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 12nC @ 4.5V
Max Input Capacitance: 744pF @ 20V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 60 mOhm @ 3.6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
MOSFET 20V P-channel Trench MOSFET
MOSFET Transistor, P Channel, -3.6 A, -20 V, 0.048 ohm, -4.5 V, -650 mV RoHS Compliant: Yes
MOSFET P-CH 20V 3.6A TO236AB
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMV50XPR | 278-PMV50XPR | 1727-2309-6-ND | 1089800-PMV50XPR | PMV50XPR | 68Y7843 | PMV50XPR |
| Product Name | 20 V, P-channel Trench MOSFET | P-Channel 20 V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV50XPR | MOSFET | Mosfet Transistor, P Channel, -3.6 A, -20 V, 0.048 Ohm, -4.5 V, -650 Mv Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | -20 volts | 20 volts | |||||
| IDSS | -4400 milliamps | ||||||
| VGS(off) | -0.6500 volts |
