N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The device has a drain-source voltage rating of 30 V, a continuous drain current of 900 mA at 25 °C, and a drain-source on-state resistance of 370 to 490 mΩ at V_GS = 4.5 V and 25 °C. It features ESD protection exceeding 2 kV HBM and operates with a junction temperature range from -55 °C to 150 °C. The package measures 1.0 × 0.6 × 0.48 mm.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMZ370UNE/SOT883/XQF
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | PMZ370UNEZ | 1727-PMZ370UNEZTR-ND |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | 30 volts | |
| IDSS | 900000 milliamps | |
| VGS(off) | 8 volts |
