P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET P-CH 20V 1.2A TO236AB
MOSFET P-CH 20V 1.2A TO236AB
P-Channel 20V 1.2A (Ta) 335mW (Ta) Surface Mount TO-236AB
MOSFET P-CH 20V 1.2A TO236AB
MOSFET PMV160UP/TO-236AB/RE
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV160UPVL | 1727-PMV160UPVLDKR-ND | PMV160UPVL | PMV160UPVL |
| Product Name | 20 V, 1.2 A P-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement |