Nexperia B.V. Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance... | |
| 425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually... | |
| 50 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications operating... | |
| 50 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at... | |
| 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ | |
| 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ | |
| 500 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually... | |
| 60 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at... | |
| 60 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at... | |
| ASFET for Battery System applications, characterized by low RDSon and strong SOA capability for reduced I²R conduction losses. ASFETs deliver high efficiency, reduced heat generation and superior handling of... | |
| ASFET for Battery System applications, characterized by low RDSon and strong SOA capability for reduced I2R conduction losses. ASFETs deliver high efficiency, reduced heat generation and superior... | |
| Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits Dual MOSFET Repetitive avalanche rated High reliability LFPAK56D package Copper-clip, solder die attach... | |
| Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits Dual MOSFET Repetitive avalanche rated High reliability LFPAK56D package Copper-clip, solder die attach... | |
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N-channel 25 V, 6.1 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN6R0-25YLB,115
N-channel 25 V, 6.5 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN6R5-25YLC,115
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Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits... |
| Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits... | |
| Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high efficiency and the low spiking performance usually associated... | |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an... | |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia's unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an... | |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated... | |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current. Rated... | |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an... | |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an... | |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon, low IDSS leakage even when hot, high efficiency and high current. Rated... | |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated... | |
| Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor... | |
| Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... | |
| N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-mode applications. Features... | |
| N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56E package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-mode applications. Features... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology MLPAK33 package (3.3... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Ultra low Q... | |
| N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMNR90-80ASE delivers very low R... | |
| NextPower 100 V, enhanced logic level gate drive MOSFET in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package. Features and benefits Logic-level compatible Low Qrr for higher efficiency and... | |
| NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower... | |
| NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. Features and benefits Low Qrr for higher efficiency... | |
| NPN Darlington transistor in a SOT89 plastic package. PNP complement: PXTA64. Features and benefits High current (max. 500 mA) Low voltage (max. 30 V). AEC-Q101 qualified Applications High input impedance... | |
| NPN Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 500 mA) Low voltage (max. 30 V) Applications Pre-amplifiers requiring high input impedance... | |
| NPN Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 500 mA) Low voltage (max. 30 V) Qualified according to AEC-Q101 and recommended... | |
| NPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PXTA92-Q Features and benefits High breakdown voltage Medium power and flat... | |
| NPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PXTA92 Features and benefits High breakdown voltage Medium power and flat... | |
| NPN high-voltage transistor in a SOT223 (SC73) Surface-Mounted Device plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 400 V) Applications Telecommunication | |
| NPN high-voltage transistor in a SOT223 (SC73) Surface-Mounted Device plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 400 V) Qualified according to AEC-Q101 and recommended... | |
| NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: PZTA92-Q Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) Qualified according to... | |
| NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: PZTA92 Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) Applications Telephony and... | |
| NPN switching transistor in a SOT223 plastic package. PNP complement: PZT4403. Features and benefits High current (max. 600 mA) Low voltage. AEC-Q101 qualified Applications Switching and linear amplification in industrial... | |
| NPN switching transistor in a SOT223 plastic package. PNP complement: PZT2907A. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) Applications Switching and linear amplification. | |
| NPN switching transistor in a SOT89 plastic package. PNP complement: PXT2907A. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V). Applications General purpose switching and linear... | |
| NPN switching transistor in a SOT89 plastic package. PNP complement: PXT4403. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications Switching and linear... | |
| NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design... | |
| NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD10 PNP/PNP complement: PUMB10 Features and benefits 100 mA output current capability... | |
| NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD12 PNP/PNP complement: PUMB2 Features and benefits 100 mA output current capability... | |
| NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD13 PNP/PNP complement: PUMB13 Features and benefits 100 mA output current capability... | |
| NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD15 PNP/PNP complement: PUMB15 Features and benefits 100 mA output current capability... | |
| NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD17-Q PNP/PNP complement: PUMB17-Q Features and benefits Built-in bias resistors Simplifies circuit... | |
| NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD17 PNP/PNP complement: PUMB17 Features and benefits Built-in bias resistors Simplifies circuit... | |
| NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD18-Q PNP/PNP complement: PUMB18-Q Features and benefits 100 mA output current capability... | |
| NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD18 PNP/PNP complement: PUMB18 Features and benefits 100 mA output current capability... | |
| NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD20-Q PNP/PNP complement: PUMB20-Q Features and benefits Built-in bias resistors Simplifies circuit... | |
| NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD20 PNP/PNP complement: PUMB20 Features and benefits Built-in bias resistors Simplifies circuit... | |
| NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD30-Q PNP/PNP complement: PUMB30-Q Features and benefits 100 mA output current capability... | |
| NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD30 PNP/PNP complement: PUMB30 Features and benefits 100 mA output current capability... | |
| NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD3 PNP/PNP complement: PUMB11 Features and benefits 100 mA output current capability... | |
| NPN/NPN general-purpose double transistors in a very small SOT363-3 (SC-88) Surface Mounted Device (SMD) plastic package. Features and benefits Simplifies circuit design Reduces component count Reduces pick and place costs... | |
| NPN/NPN general-purpose double transistors in a very small SOT363-3 (SC-88) Surface Mounted Device (SMD) plastic package. Features and benefits Simplifies circuit design Reduces component count Reduces pick and place costs... | |
| NPN/NPN general-purpose transistor with two independently operating transistors in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Double general-purpose transistor Board-space reduction Very small SMD... | |
| NPN/NPN general-purpose transistor with two independently operating transistors in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Double general-purpose transistor Board-space reduction Very small SMD... | |
| NPN/NPN Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design... | |
| NPN/NPN Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB3H-Q NPN/PNP complement: PUMD6H-Q Features and benefits 100 mA output current capability... | |
| NPN/NPN Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB9-Q NPN/PNP complement: PUMD9-Q Features and benefits 100 mA output current capability... | |
| NPN/NPN Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB9 NPN/PNP complement: PUMD9 Features and benefits 100 mA output current capability... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD14 PNP/PNP complement: PUMB14 Features and benefits Built-in bias resistors Simplified circuit design... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD24 PNP/PNP complement: PUMB24 Features and benefits Built-in bias resistors Simplifies circuit design... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD4-Q PNP/PNP complement: PUMB4-Q Features and benefits Built-in bias resistors Simplified circuit design... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Built-in bias resistors Simplified circuit design Reduces component count Reduces pick and... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD10-Q PNP/PNP complement: PUMB10-Q Features and benefits 100 mA output current capability Built-in... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD16-Q PNP/PNP complement: PUMB16-Q Features and benefits Built-in bias resistors Simplified circuit design... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD16 PNP/PNP complement: PUMB16 Features and benefits Built-in bias resistors Simplified circuit design... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD19 PNP/PNP complement: PUMB19 Features and benefits Built-in bias resistors Simplified circuit design... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD24-Q Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD3-Q PNP/PNP complement: PUMB11-Q Features and benefits 100 mA output current capability Built-in... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD4 PNP/PNP complement: PUMB4 Features and benefits Built-in bias resistors Simplified circuit design... | |
| NPN/NPN resistor-equipped transistors in a very small SOT363 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB3-Q NPN/NPN complement: PUMD6-Q Features and benefits Built-in bias resistors Simplified circuit design Reduction of... | |
| NPN/NPN resistor-equipped transistors in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB3 NPN/NPN complement: PUMD6 Features and benefits Built-in bias resistors Simplified circuit design Reduction... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH15-Q PNP/PNP complement: PUMB15-Q Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH15 PNP/PNP complement: PUMB15 Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH16-Q PNP/PNP complement: PUMB16-Q Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH16 PNP/PNP complement: PUMB16 Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH17-Q PNP/PNP complement: PUMB17-Q Features and benefits Built-in bias resistors Simplifies circuit... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH17 PNP/PNP complement: PUMB17 Features and benefits Built-in bias resistors Simplifies circuit... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH18-Q PNP/PNP complement: PUMB18-Q Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH18 PNP/PNP complement: PUMB18 Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH2-Q PNP/PNP complement: PUMB2-Q Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH20-Q PNP/PNP complement: PUMB20-Q Features and benefits Built-in bias resistors Simplifies circuit... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH20 PNP/PNP complement: PUMB20 Features and benefits Built-in bias resistors Simplifies circuit... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH2 PNP/PNP complement: PUMB2 Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH30-Q PNP/PNP complement: PUMB30-Q Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH30 PNP/PNP complement: PUMB30 Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH4 PNP/PNP complement: PUMB4 Features and benefits Built-in bias resistors Simplified circuit... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB10-Q NPN/NPN complement: PUMH10-Q Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB10 NPN/NPN complement: PUMH10 Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB13 NPN/NPN complement: PUMH13 Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB19-Q NPN/NPN complement: PUMH19 Features and benefits Built-in bias resistors Simplifies circuit... | |
| NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB24 NPN/NPN complement: PUMH24 Features and benefits Built-in bias resistors Simplifies circuit... | |
| NPN/PNP general-purpose double transistor in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Simplified circuit design Reduced component count Reduced pick and place costs AEC-Q101... | |
| NPN/PNP general-purpose double transistor in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Simplified circuit design Reduced component count Reduced pick and place costs Qualified... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH1-Q PNP/PNP complement: PUMB1-Q Features and benefits 100 mA output current capability... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH11-Q PNP/PNP complement: PUMB11-Q Features and benefits 100 mA output current capability... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH11 PNP/PNP complement: PUMB11 Features and benefits 100 mA output current capability... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH1 PNP/PNP complement: PUMB1 Features and benefits 100 mA output current capability... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH9-Q PNP/PNP complement: PUMB9-Q Features and benefits 100 mA output current capability... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH9 PNP/PNP complement: PUMB9 Features and benefits 100 mA output current capability... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (TSSOP6) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH7H-Q PNP/PNP complement: PUMB3H-Q Features and benefits 100 mA output current capability... | |
| NPN/PNP Resistor-Equipped Transistor (RET) a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place... | |
| NPN/PNP Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH7 PNP/PNP complement: PUMB3 Features and benefits Built-in bias resistors Simplifies circuit design... | |
| NPN/PNP Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB14-Q NPN/NPN complement: PUMH14-Q Features and benefits Built-in bias resistors Simplifies circuit design... | |
| NPN/PNP Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB14 NPN/NPN complement: PUMH14 Features and benefits Built-in bias resistors Simplifies circuit design... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Trench MOSFET technology MLPAK33 package... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology MLPAK33 package (3.3... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology MLPAK33 package... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-1) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Thermally efficient package... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology MLPAK33 package (3.3 x 3.3... | |
| P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits High thermal power dissipation capability Suitable for thermally demanding... | |
| PNP high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PXTA42-Q Features and benefits High breakdown voltage Medium power and flat... | |
| PNP high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PXTA42 Features and benefits High breakdown voltage Medium power and flat... | |
| PNP high-voltage transistor in a small SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PZTA42-Q Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) Qualified... | |
| PNP high-voltage transistor in a small SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PZTA42 Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) Applications... | |
| PNP switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) Surface-Mounted Device (SMD) plastic package. NPN complement: PXT2222A Features and benefits High current: max. 600 mA Low voltage: max. | |
| PNP switching transistor in a medium power SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Collector-emitter voltage VCEO = 40 V... | |
| PNP switching transistor in a medium power SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PZT4401 Features and benefits High current (max. 600 mA) Low voltage (max. 40... | |
| PNP switching transistor in a SOT223 plastic package. NPN complement: PZT2222A. Features and benefits High current (max. 600 mA) Low voltage (max. 60 V). AEC-Q101 qualified Applications Switching and linear... | |
| PNP switching transistor in a SOT89 plastic package. NPN complement: PXT4401. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications Switching and linear... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Reduces component count Built-in bias resistors... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Built-in bias resistors Simplified circuit design Reduction of component count Reduced... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD10-Q NPN/NPN complement: PUMH10-Q Features and benefits 100 mA output current capability... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD10-Q NPN/NPN complement: PUMH10-Q Features and benefits Built-in bias resistors Simplifies circuit... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD10 NPN/NPN complement: PUMH10 Features and benefits Built-in bias resistors Simplifies circuit... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD12-Q NPN/NPN complement: PUMH2-Q Features and benefits 100 mA output current capability... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD13 NPN/NPN complement: PUMH13 Features and benefits 100 mA output current capability... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD15-Q NPN/NPN complement: PUMH15-Q Features and benefits 100 mA output current capability... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD15 NPN/NPN complement: PUMH15 Features and benefits 100 mA output current capability... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD2-Q NPN/NPN complement: PUMH1-Q Features and benefits 100 mA output current capability... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD2 NPN/NPN complement: PUMH1 Features and benefits 100 mA output current capability... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD3 NPN/NPN complement: PUMH11 Features and benefits 100 mA output current capability... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP Complement: PUMD4 NPN/NPN Complement: PUMH4 Features and benefits Built-in bias resistors Simplified circuit... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD9-Q NPN/NPN complement: PUMH9-Q Features and benefits 100 mA output current capability... | |
| PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD9 NPN/NPN complement: PUMH9 Features and benefits 100 mA output current capability... | |
| PNP/PNP double Resistor-Equipped Transistors (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD13 NPN/NPN complement: PUMH13 Features and benefits 100 mA output current capability... | |
| PNP/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH7H-Q NPN/PNP complement: PUMD6H-Q Features and benefits 100 mA output current capability... | |
| PNP/PNP Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD6-Q NPN/NPN complement: PUMH7-Q Features and benefits Built-in bias resistors Simplifies circuit design... | |
| PNP/PNP Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH24 NPN/PNP complement: PUMD24 Features and benefits Built-in bias resistors Simplifies circuit design... | |
| PNP/PNP Resistor-Equipped Transistor (RET) in a very small SOT363-3 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD6 NPN/NPN complement: PUMH7 Features and benefits Built-in bias resistors Simplifies circuit design Reduces... | |
| PNP/PNP Resistor-Equipped Transistors (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD3-Q NPN/NPN complement: PUMH11-Q Features and benefits 100 mA output current capability Built-in... | |
| Resistor-equipped PNP transistor with two diodes on one chip in a SOT353 (SC-88A) plastic package. Stabilized output current of between 15 uA and 50 mA by connection of an external... | |
| Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN7R6-100BSE complements the latest "hot-swap" controllers - robust enough to withstand... | |
| Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. | |
| Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... | |
| Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... | |
| Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and... | |
| Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... | |
| SuperSOA N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. PSMN8R9-100BSE delivers low RDSon and very strong linear-mode (SOA) performance, and complements the latest "hot-swap" controllers... | |
| Three-terminal shunt regulator family with an output voltage range between Vref = 1.24 V and 14 V, to be set by two external resistors. Table 1.Product overview Reference voltage... | |
| Three-terminal shunt regulator family with an output voltage range between Vref = 2.495 V and 36 V, to be set by two external resistors. Table 1.Product overview Reference voltage... | |
| Two independently operating NPN/PNP general-purpose double transistors in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 40... | |
| Two independently operating PNP transistors in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN complement: PUMX1-Q Features and benefits Low current (max. 100 mA) Low voltage (max. | |
| Two independently operating PNP transistors in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN complement: PUMX1 Features and benefits Low current (max. 100 mA) Low voltage (max. | |
| Programmable output voltage up to 14 V Two different reference voltage tolerances: Standard grade: 1.5 % A-Grade: 1 % Low output noise Typical output impedance: 0.1 Ω Sink current capability:... |
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