Nexperia B.V. 20 V, N-channel Trench MOSFET PMPB12UNEAX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 20 V, N-channel Trench MOSFET - PMPB12UNEAX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMPB12UNEAXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB12UNEAXTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB12UNEAXDKR-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 20V, 7.9A, 12.5W, Sot-1220; Transistor Polarity Nexperia - 78AC6352 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB12UNEAX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, N-channel Trench MOSFET - PMPB12UNEAX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, N-channel Trench MOSFET
PMPB12UNEAX
20 V, N-channel Trench MOSFET PMPB12UNEAX
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Trench MOSFET technology
  • Side wettable flanks for optical solder inspection
  • ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B)
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMPB12UNEAXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB12UNEAXCT-ND
Single FETs, MOSFETs 1727-PMPB12UNEAXCT-ND
MOSFET N-CH 20V 7.9A DFN2020MD-6

MOSFET N-CH 20V 7.9A DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB12UNEAXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB12UNEAXTR-ND
Single FETs, MOSFETs 1727-PMPB12UNEAXTR-ND
N-Channel 20V 7.9A (Ta) 1.6W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

N-Channel 20V 7.9A (Ta) 1.6W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB12UNEAXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB12UNEAXDKR-ND
Single FETs, MOSFETs 1727-PMPB12UNEAXDKR-ND
MOSFET N-CH 20V 7.9A DFN2020MD-6

MOSFET N-CH 20V 7.9A DFN2020MD-6

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
20V 7.9A MOSFET Transistor
278-PMPB12UNEAX
20V 7.9A MOSFET Transistor 278-PMPB12UNEAX
MOSFET N-CH 20V 7.9A DFN2020MD-6 Product overview: PMPB12UNEAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB12UNEAX can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 7.9A DFN2020MD-6 Product overview: PMPB12UNEAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB12UNEAX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 20V, 7.9A, 12.5W, Sot-1220; Transistor Polarity Nexperia - 78AC6352 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, 7.9A, 12.5W, Sot-1220; Transistor Polarity Nexperia
78AC6352
Mosfet, N-Ch, 20V, 7.9A, 12.5W, Sot-1220; Transistor Polarity Nexperia 78AC6352
MOSFET, N-CH, 20V, 7.9A, 12.5W, SOT-1220; Transistor Polarity:N Channel; Continuous Drain Current Id:7.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:650mV; RoHS Compliant: Yes

MOSFET, N-CH, 20V, 7.9A, 12.5W, SOT-1220; Transistor Polarity:N Channel; Continuous Drain Current Id:7.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:650mV; RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB12UNEAX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMPB12UNEAX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMPB12UNEAX
MOSFET N-CH 20V 7.9A DFN2020MD-6

MOSFET N-CH 20V 7.9A DFN2020MD-6

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMPB12UNEAX
MOSFET PMPB12UNEAX
MOSFET PMPB12UNEA/SOT1220/S OT1220

MOSFET PMPB12UNEA/SOT1220/SOT1220

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Technical Specifications

  Nexperia B.V. DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMPB12UNEAX 1727-PMPB12UNEAXCT-ND 278-PMPB12UNEAX 78AC6352 PMPB12UNEAX PMPB12UNEAX
Product Name 20 V, N-channel Trench MOSFET Single FETs, MOSFETs 20V 7.9A MOSFET Transistor Mosfet, N-Ch, 20V, 7.9A, 12.5W, Sot-1220; Transistor Polarity Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 20 volts 20 volts
IDSS 7900 milliamps 7900 milliamps
VGS(off) 0.6500 volts
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