P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) surface-mounted plastic package, measuring 2.9 mm x 1.3 mm x 1 mm, using Trench MOSFET technology. It has a drain-source voltage rating of -20 V, a gate-source voltage range of -12 V to 12 V, and a continuous drain current of -4.9 A at 25 °C. The drain-source on-state resistance is 30 mΩ at -4.5 V gate bias. The junction temperature range extends to 175 °C, and the device is AEC-Q101 qualified for automotive applications.
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 20V 4.9A (Ta) 610mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
P-Channel 20V 4.9A (Ta) 610mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
P-Channel 20V 4.9A (Ta) 610mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
MOSFET P-CH 20V 4.9A TO236AB
MOSFET, P-CH, 20V, 4.9A, 175DEG C, 0.61W ROHS COMPLIANT: YES
MOSFET P-CH 20V 4.9A TO236AB
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV30XPAR | 1727-PMV30XPARDKR-ND | PMV30XPAR | 54AH3567 | PMV30XPAR |
| Product Name | 20 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 20V, 4.9A, 175Deg C, 0.61W Rohs Compliant Nexperia | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | -20 volts | 20 volts | |||
| IDSS | -4900 milliamps | 4900 milliamps | |||
| VGS(off) | 12 volts | ||||
| PD | 610 milliwatts | 610 milliwatts |
