Nexperia B.V. 20 V, P-channel Trench MOSFET PMV30XPAR

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj = 175 °C Trench MOSFET technology Very fast switching AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
  • 20 V, P-channel Trench MOSFET - PMV30XPAR - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMV30XPARTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMV30XPARCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMV30XPARDKR-ND - DigiKey
    DigiKey
  • Mosfet, P-Ch, 20V, 4.9A, 175Deg C, 0.61W Rohs Compliant Nexperia - 54AH3567 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMV30XPAR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single FETs, MOSFETs - PMV30XPAR - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj = 175 °C Trench MOSFET technology Very fast switching AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - PMV30XPAR - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMV30XPAR
20 V, P-channel Trench MOSFET PMV30XPAR
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj = 175 °C Trench MOSFET technology Very fast switching AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Extended temperature range Tj = 175 °C
  • Trench MOSFET technology
  • Very fast switching
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMV30XPARTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV30XPARTR-ND
Single FETs, MOSFETs 1727-PMV30XPARTR-ND
P-Channel 20V 4.9A (Ta) 610mW (Ta), 8.3W (Tc) Surface Mount TO-236AB

P-Channel 20V 4.9A (Ta) 610mW (Ta), 8.3W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMV30XPARCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV30XPARCT-ND
Single FETs, MOSFETs 1727-PMV30XPARCT-ND
P-Channel 20V 4.9A (Ta) 610mW (Ta), 8.3W (Tc) Surface Mount TO-236AB

P-Channel 20V 4.9A (Ta) 610mW (Ta), 8.3W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMV30XPARDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV30XPARDKR-ND
Single FETs, MOSFETs 1727-PMV30XPARDKR-ND
P-Channel 20V 4.9A (Ta) 610mW (Ta), 8.3W (Tc) Surface Mount TO-236AB

P-Channel 20V 4.9A (Ta) 610mW (Ta), 8.3W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Mosfet, P-Ch, 20V, 4.9A, 175Deg C, 0.61W Rohs Compliant Nexperia - 54AH3567 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 20V, 4.9A, 175Deg C, 0.61W Rohs Compliant Nexperia
54AH3567
Mosfet, P-Ch, 20V, 4.9A, 175Deg C, 0.61W Rohs Compliant Nexperia 54AH3567
MOSFET, P-CH, 20V, 4.9A, 175DEG C, 0.61W ROHS COMPLIANT: YES

MOSFET, P-CH, 20V, 4.9A, 175DEG C, 0.61W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMV30XPAR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMV30XPAR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMV30XPAR
MOSFET P-CH 20V 4.9A TO236AB

MOSFET P-CH 20V 4.9A TO236AB

Supplier's Site
Single FETs, MOSFETs - PMV30XPAR - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMV30XPAR
Single FETs, MOSFETs PMV30XPAR
MOSFET P-CH 20V 4.9A TO236AB

MOSFET P-CH 20V 4.9A TO236AB

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMV30XPAR 1727-PMV30XPARTR-ND 54AH3567 PMV30XPAR PMV30XPAR
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs Mosfet, P-Ch, 20V, 4.9A, 175Deg C, 0.61W Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts 20 volts
IDSS -4900 milliamps 4900 milliamps
VGS(off) 12 volts
PD 610 milliwatts 610 milliwatts
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